GaN-Based light-emitting-diode with a p-InGaN layer

P. H. Chen, Cheng-Huang Kuo, W. C. Lai, Yu An Chen, L. C. Chang, S. J. Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.

Original languageEnglish
Article number6679256
Pages (from-to)204-207
Number of pages4
JournalIEEE/OSA Journal of Display Technology
Issue number3
StatePublished - Mar 2014


  • Efficiency droop
  • light emitting diode (LED)
  • p-InGaN


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