Abstract
GaN-based LEDs with a p-InGaN layer was proposed and fabricated. By inserting the 50-nm-thick p-In0.01\Ga0.99N layer, it was found that we could reduce the 20 mA forward voltage from 3.34 to 2.99 V. It was found the inserted p-InGaN layer could also reduce the efficiency droop from 36.7% to 23.8%.
Original language | English |
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Article number | 6679256 |
Pages (from-to) | 204-207 |
Number of pages | 4 |
Journal | IEEE/OSA Journal of Display Technology |
Volume | 10 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2014 |
Keywords
- Efficiency droop
- light emitting diode (LED)
- p-InGaN