GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

C. W. Kuo; L. C. Chang; Cheng-Huang Kuo

doi:10.1109/LPT.2009.2031247

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

C. W. Kuo^*, L. C. Chang, Cheng-Huang Kuo

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Using self-aligned SiO₂ nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

Original language	English
Pages (from-to)	1645-1647
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	21
Issue number	21
DOIs	https://doi.org/10.1109/LPT.2009.2031247
State	Published - 1 Nov 2009

Keywords

InGaN-GaN
Light-emitting diode (LED)
Nano
Template

Access to Document

10.1109/LPT.2009.2031247

Cite this

@article{ce0edc1861fb4e369ec67889b07156eb,

title = "GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template",

abstract = "Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.",

keywords = "InGaN-GaN, Light-emitting diode (LED), Nano, Template",

author = "Kuo, {C. W.} and Chang, {L. C.} and Cheng-Huang Kuo",

year = "2009",

month = nov,

day = "1",

doi = "10.1109/LPT.2009.2031247",

language = "English",

volume = "21",

pages = "1645--1647",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "21",

}

TY - JOUR

T1 - GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

AU - Kuo, C. W.

AU - Chang, L. C.

AU - Kuo, Cheng-Huang

PY - 2009/11/1

Y1 - 2009/11/1

N2 - Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

AB - Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

KW - InGaN-GaN

KW - Light-emitting diode (LED)

KW - Nano

KW - Template

UR - http://www.scopus.com/inward/record.url?scp=70350406308&partnerID=8YFLogxK

U2 - 10.1109/LPT.2009.2031247

DO - 10.1109/LPT.2009.2031247

M3 - Article

AN - SCOPUS:70350406308

SN - 1041-1135

VL - 21

SP - 1645

EP - 1647

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 21

ER -

GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this