GaN-based light-emitting diode prepared on nano-inverted pyramid GaN template

C. W. Kuo*, L. C. Chang, Cheng-Huang Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Using self-aligned SiO2 nano-spheres as an etching mask, the authors demonstrated the formation of a GaN-based nano-inverted pyramid (NIP) structure. It was found that crystal quality of the GaN epilayer prepared on an NIP/GaN template was significantly better than that prepared with conventional low-temperature GaN nucleation layer. With the NIP structure, it was found that 20-mA light-emitting-diode (LED) output power can be enhanced by 32%, as compared with the conventional LED.

Original languageEnglish
Pages (from-to)1645-1647
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number21
StatePublished - 1 Nov 2009


  • InGaN-GaN
  • Light-emitting diode (LED)
  • Nano
  • Template


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