GaN-based LEDs with mesh ITO p-contact and nanopillars

Wei Chih Lai*, P. H. Chen, Li Chuan Chang, Cheng-Huang Kuo, Jinn Kong Sheu, Chun Ju Tun, S. C. Shei

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In this letter, the authors report the fabrication of GaN-based light-emitting diodes (LEDs) with mesh indium-tin-oxide p-contact and nanopillars on patterned sapphire substrate. Using hydrothermal ZnO nanorods as the etching hard mask, the authors successfully formed vertical GaN nanopillars inside the mesh regions and on the mesa-etched regions. It was found that 20-mA forward voltage and reverse leakage currents observed from the proposed LED were only slightly larger than those observed from the conventional LEDs. It was also found that output power of the proposed LED was more than 80% larger than that observed from conventional LED prepared on flat sapphire substrate.

Original languageEnglish
Pages (from-to)1293-1295
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number18
StatePublished - 15 Sep 2009


  • GaN
  • Light-emitting diode (LED)
  • Mesh indium-tin-oxide (ITO) contact
  • Nanopillars
  • Patterned sapphire substrate (PSS)


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