GaN-based blue vertical-cavity surface-emitting lasers

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

2 Scopus citations


In this chapter we provide a brief review of the optical and electrical pumped GaN-based vertical-cavity surface-emitting lasers from the fabrication technology to output characteristics analysis. Three types of VCSEL structures are discussed in the following paragraph including their pros and cons among design and process difficulties. First type is fully epitaxial VCSEL structure, second one is the hybrid microcavity consists of a bottom epitaxial DBR and a top dielectric DBR, and third one is vertical resonator composes dielectric top and bottom DBR. We also present several examples of GaN-based VCSELs achieve laser action under optical and electrical pumping at room temperature.
Original languageAmerican English
Title of host publicationSemiconductor Lasers and Diode-based Light Sources for Biophotonics
EditorsPeter E. Andersen, Paul Michael Petersen
PublisherThe Institution of Engineering and Technology
Number of pages30
ISBN (Electronic)9781785612732
ISBN (Print)9781785612725
StatePublished - Jan 2019


  • Bottom epitaxial distributed bragg reflector
  • Design of specific laser systems
  • Distributed bragg reflector lasers
  • Electrical pumped
  • Fabrication technology
  • Fully epitaxial VCSEL structure
  • Gallium compounds
  • GaN
  • GaN-based blue vertical-cavity surface-emitting lasers
  • Hybrid microcavity
  • III-V semiconductors
  • Laser cavity resonators
  • Laser resonators and cavities
  • Laser resonators and cavities
  • Lasing action in semiconductors
  • Micro-optical devices and technology
  • Micro-optical devices and technology
  • Microcavity lasers
  • Optical pumping
  • Optical pumping
  • Output characteristics
  • Room temperature
  • Semiconductor lasers
  • Semiconductor lasers
  • Surface emitting lasers
  • Top dielectric DBR
  • Vertical resonator


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