Gallium K-edge EXAFS study of GaN:Mg films

Yung Chung Pan*, Shu Fang Wang, Wen Hsiung Lee, Wei Cherng Lin, Chen Ke Shu, Chung I. Chiang, Chin Hwa Lin, Horng Chang, Jyh Fu Lee, Ling Yun Jang, Deng Sung Lin, Ming Chih Lee, Wen Hsiung Chen, Wei-Kuo Chen

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Ga K-edge extended X-ray absorption fine structure (EXAFS) measurement was employed to investigate the local structure of GaN:Mg films grown by metalorganic vapor phase epitaxy (MOVPE) with various Cp 2 Mg dopant flow rates using both in-plane and out-of-plane polarization modes of X-ray. The near edge absorption spectra were found to depend on X-ray polarization strongly for undoped GaN sample and weakly to minutely for heavily Mg-doped and amorphous films. The results indicate Mg incorporation modifies the local structure around the absorber Ga atom and, hence, alters the molecular orbital electron transition of GaN sample. EXAFS analysis showed both vacancy and Mg-interstitial defects contribute to the reduction of coordination numbers along the hexagonal c-axis of GaN:Mg film.

Original languageEnglish
Pages (from-to)535-543
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
DOIs
StatePublished - 1 Jan 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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