GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

Chin-Chun Meng; H. R. Fetterman; D. C. Streit; T. R. Block; Y. Saito

doi:10.1109/MWSYM.1993.276881

GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

Chin-Chun Meng^*, H. R. Fetterman, D. C. Streit, T. R. Block, Y. Saito

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The first CW operation of GaAs/AlGaAs multiquantum well IMPATT devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current since these structures improve the non-linearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure and experimental results are presented in this paper. A 6.4 mW CW power output was achieved at 100.3 GHz.

Original language	English
Title of host publication	Digest IEEE MTT-S International Symposium Digest
Publisher	Publ by IEEE
Pages	539-542
Number of pages	4
ISBN (Print)	0780312090
DOIs	https://doi.org/10.1109/MWSYM.1993.276881
State	Published - 1 Jan 1993
Event	Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) - Atlanta, GA, USA Duration: 14 Jun 1993 → 18 Jun 1993

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2
ISSN (Print)	0149-645X

Conference

Conference	Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4)
City	Atlanta, GA, USA
Period	14/06/93 → 18/06/93

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10.1109/MWSYM.1993.276881

Cite this

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title = "GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices",

abstract = "The first CW operation of GaAs/AlGaAs multiquantum well IMPATT devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current since these structures improve the non-linearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure and experimental results are presented in this paper. A 6.4 mW CW power output was achieved at 100.3 GHz.",

author = "Chin-Chun Meng and Fetterman, {H. R.} and Streit, {D. C.} and Block, {T. R.} and Y. Saito",

year = "1993",

month = jan,

day = "1",

doi = "10.1109/MWSYM.1993.276881",

language = "English",

isbn = "0780312090",

series = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Publ by IEEE",

pages = "539--542",

booktitle = "Digest IEEE MTT-S International Symposium Digest",

note = "Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) ; Conference date: 14-06-1993 Through 18-06-1993",

}

Meng, C-C, Fetterman, HR, Streit, DC, Block, TR & Saito, Y 1993, GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices. in Digest IEEE MTT-S International Symposium Digest. IEEE MTT-S International Microwave Symposium Digest, vol. 2, Publ by IEEE, pp. 539-542, Proceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4), Atlanta, GA, USA, 14/06/93. https://doi.org/10.1109/MWSYM.1993.276881

GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices. / Meng, Chin-Chun; Fetterman, H. R.; Streit, D. C. et al.
Digest IEEE MTT-S International Symposium Digest. Publ by IEEE, 1993. p. 539-542 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

AU - Meng, Chin-Chun

AU - Fetterman, H. R.

AU - Streit, D. C.

AU - Block, T. R.

AU - Saito, Y.

PY - 1993/1/1

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N2 - The first CW operation of GaAs/AlGaAs multiquantum well IMPATT devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current since these structures improve the non-linearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure and experimental results are presented in this paper. A 6.4 mW CW power output was achieved at 100.3 GHz.

AB - The first CW operation of GaAs/AlGaAs multiquantum well IMPATT devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current since these structures improve the non-linearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure and experimental results are presented in this paper. A 6.4 mW CW power output was achieved at 100.3 GHz.

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DO - 10.1109/MWSYM.1993.276881

M3 - Conference contribution

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SN - 0780312090

T3 - IEEE MTT-S International Microwave Symposium Digest

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BT - Digest IEEE MTT-S International Symposium Digest

PB - Publ by IEEE

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Y2 - 14 June 1993 through 18 June 1993

ER -

GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

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