GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices

Chin-Chun Meng*, H. R. Fetterman, D. C. Streit, T. R. Block, Y. Saito

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The first CW operation of GaAs/AlGaAs multiquantum well IMPATT devices at 100 GHz has been achieved. Multiquantum wells were used to generate the avalanche injection current since these structures improve the non-linearity of the avalanche process and reduce the ionization rate saturation limitations. The operation and design principle, fabrication procedure and experimental results are presented in this paper. A 6.4 mW CW power output was achieved at 100.3 GHz.

Original languageEnglish
Title of host publicationDigest IEEE MTT-S International Symposium Digest
PublisherPubl by IEEE
Pages539-542
Number of pages4
ISBN (Print)0780312090
DOIs
StatePublished - 1 Jan 1993
EventProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4) - Atlanta, GA, USA
Duration: 14 Jun 199318 Jun 1993

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2
ISSN (Print)0149-645X

Conference

ConferenceProceedings of the 1993 IEEE MTT-S International Symposium on Circuits and Systems, Part 4 (of 4)
CityAtlanta, GA, USA
Period14/06/9318/06/93

Fingerprint

Dive into the research topics of 'GaAs/AlGaAs multiquantum well structures applied to high frequency IMPATT devices'. Together they form a unique fingerprint.

Cite this