GaA1As/GaAs Heterojunction Bipolar Transistors: Issues and Prospects for Application

P. M. Asbeck, Mau-Chung Chang, J. A. Higgins, N. H. Sheng, G. J. Sullivan, Keh Chung Wang

    Research output: Contribution to journalArticlepeer-review

    156 Scopus citations

    Abstract

    Issues important for the manufacturing of GaAlAs/GaAs heterojunction bipolar transistors and their prospects for application in various areas are discussed. Microwave and digital performance status of HBT's is reviewed. Extrapolated values of maximum frequency of oscillation above 200 GHz and frequency divider operation at 26.9 GHz are reported. Key prospects for further device development are highlighted.

    Original languageEnglish
    Pages (from-to)2032-2042
    Number of pages11
    JournalIEEE Transactions on Electron Devices
    Volume36
    Issue number10
    DOIs
    StatePublished - 1 Jan 1989

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