Functionalization of nanoscaled 2 nm-thick ALD-HfO2 layer by rapid thermal annealing and CF4 plasma for LAPS NH4 + detection

Jung Hsiang Yang, Tseng Fu Lu, Jer Chyi Wang, Dorota G. Pijanswska, Chi Hang Chin, Cheng En Lue, Chia Ming Yang, Chao Sung Lai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, discussing the detection of NH4+ ion based on LAPS with functionalized 2 nm-thick ALD-HfO2 film using RTA and CF4 plasma is demonstrated. The annealing treatment at 500, 700, and 900C were performed on ALD-HfO2 film and the plasma treatment for 1, 3, and 5 min were performed on ALD-HfO2 film with 900C annealing. In the results, the response for NH4+ ion detection was decreased with increasing annealing temperature and increased with increasing plasma time. The optimum sensitivity of 37.28mV/pNH4 was achieved with 900C annealing and 5 min CF4 plasma.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages2118-2121
Number of pages4
DOIs
StatePublished - 2011
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 5 Jun 20119 Jun 2011

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/TerritoryChina
CityBeijing
Period5/06/119/06/11

Keywords

  • ammonium ion (NH)
  • and carbon tetrafluoride (CF) plasma
  • light addressable potentiometric sensor (LAPS)
  • rapid thermal annealing (RTA)

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