We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2003|
|Event||IEEE International Electron Devices Meeting - Washington, DC, United States|
Duration: 8 Dec 2003 → 10 Dec 2003