Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

C. H. Huang; D. S. Yu; Albert Chin; C. H. Wu; W. J. Chen; Chunxiang Zhu; M. F. Li; Byung Jin Cho; Dim Lee Kwong

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO ₂/Si and Al ₂O ₃/Ge-On-Insulator MOSFETs

C. H. Huang^*, D. S. Yu, Albert Chin, C. H. Wu, W. J. Chen, Chunxiang Zhu, M. F. Li, Byung Jin Cho, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

40 Scopus citations

Abstract

We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO ₂/Si and Al ₂O ₃/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO ₂/Si show mobility close to universal mobility while on Al ₂O ₃/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al ₂O ₃/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.

Original language	English
Pages (from-to)	319-322
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 2003
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 8 Dec 2003 → 10 Dec 2003

Cite this

@article{2cae59aa9f44417ea12afaa129ad5e89,

title = "Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs",

abstract = "We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.",

author = "Huang, {C. H.} and Yu, {D. S.} and Albert Chin and Wu, {C. H.} and Chen, {W. J.} and Chunxiang Zhu and Li, {M. F.} and Cho, {Byung Jin} and Kwong, {Dim Lee}",

year = "2003",

month = dec,

language = "English",

pages = "319--322",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting ; Conference date: 08-12-2003 Through 10-12-2003",

}

TY - JOUR

T1 - Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2/Si and Al 2O 3/Ge-On-Insulator MOSFETs

AU - Huang, C. H.

AU - Yu, D. S.

AU - Chin, Albert

AU - Wu, C. H.

AU - Chen, W. J.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Cho, Byung Jin

AU - Kwong, Dim Lee

PY - 2003/12

Y1 - 2003/12

N2 - We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.

AB - We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO 2/Si and Al 2O 3/Ge-On-Insulator (GOI) MOSFETs (EOT= 1.7nm). In additional to the comparable gate current and time-to-breakdown with Al gate C-MOSFETs, the fully NiSi and NiGe gates on SiO 2/Si show mobility close to universal mobility while on Al 2O 3/GOI show ∼2.0X higher peak electron and hole mobility than Al on Al 2O 3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.

UR - http://www.scopus.com/inward/record.url?scp=0842266645&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0842266645

SN - 0163-1918

SP - 319

EP - 322

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO ₂/Si and Al ₂O ₃/Ge-On-Insulator MOSFETs

Abstract

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