Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs

D. S. Yu; C. H. Wu; C. H. Huang; Albert Chin; W. J. Chen; Chunxiang Zhu; M. F. Li; Dim Lee Kwong

doi:10.1109/LED.2003.819274

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO ₂ n- and p-MOSFETs

D. S. Yu^*, C. H. Wu, C. H. Huang, Albert Chin, W. J. Chen, Chunxiang Zhu, M. F. Li, Dim Lee Kwong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO ₂ gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi _1-xGe _x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.

Original language	English
Pages (from-to)	739-741
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	24
Issue number	12
DOIs	https://doi.org/10.1109/LED.2003.819274
State	Published - Dec 2003

Keywords

MOSFET
NiGe
NiSi

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10.1109/LED.2003.819274

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title = "Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs",

abstract = "We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.",

keywords = "MOSFET, NiGe, NiSi",

author = "Yu, {D. S.} and Wu, {C. H.} and Huang, {C. H.} and Albert Chin and Chen, {W. J.} and Chunxiang Zhu and Li, {M. F.} and Kwong, {Dim Lee}",

year = "2003",

month = dec,

doi = "10.1109/LED.2003.819274",

language = "English",

volume = "24",

pages = "739--741",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO 2 n- and p-MOSFETs

AU - Yu, D. S.

AU - Wu, C. H.

AU - Huang, C. H.

AU - Chin, Albert

AU - Chen, W. J.

AU - Zhu, Chunxiang

AU - Li, M. F.

AU - Kwong, Dim Lee

PY - 2003/12

Y1 - 2003/12

N2 - We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.

AB - We have fabricated the fully silicided NiSi and germanided MGe dual gates n- and p-MOSFETs on 1.9 nm thick SiO 2 gate dielectric. The extracted work functions of fully NiSi and NiGe gates from thickness-dependent flat band voltage were 4.55 and 5.2 eV respectively, which may provide possible wide work function tuning using NiSi 1-xGe x. In additional to the lower gate current than Al gate n- and p-MOSFETs, the fully silicided NiSi and germanided NiGe gates MOSFETs show electron and hole mobilities close to universal mobility values with special advantage of process compatible to current VLSI fabrication line.

KW - MOSFET

KW - NiGe

KW - NiSi

UR - http://www.scopus.com/inward/record.url?scp=0347131291&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.819274

DO - 10.1109/LED.2003.819274

M3 - Article

AN - SCOPUS:0347131291

SN - 0741-3106

VL - 24

SP - 739

EP - 741

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 12

ER -

Fully Silicided NiSi and Germanided NiGe Dual Gates on SiO ₂ n- and p-MOSFETs

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Keywords

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