Abstract
In this article, a monolithically integrated driver fabricated by 12-V depletion mode gallium nitride (dGaN) and enhanced mode GaN (eGaN) driver is proposed. The proposed driver features an internal temperature-compensated (T-compensated) controller to drive an integrated 650-V eGaN power switch. Due to T-compensated characteristics, a slew-rate enhancement driver can be well-controlled by the fast turn-on (FTO) technique which is supplied by an on-chip regulator with reference voltage circuit. Therefore, the Miller plateau voltage can be tracked correctly by the proposed controller so that the switching frequency can be raised up to 50 MHz and the dV DS/dt slew rate can reach 118.3 V/ns for high efficiency and high switching operation.
Original language | English |
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Pages (from-to) | 3619 - 3627 |
Number of pages | 9 |
Journal | IEEE Journal of Solid-State Circuits |
Volume | 56 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2021 |
Keywords
- Fast turn-on (FTO) technique
- Gallium nitride (GaN)
- miller plateau voltage
- temperature-compensated (T-compensated)