Fully Integrated GaN-on-Silicon Gate Driver and GaN Switch with Temperature-Compensated Fast Turn-on Technique for Achieving Switching Frequency of 50 MHz and Slew Rate of 118.3 V/Ns

Yu Yung Kao, Sheng Hsi Hung, Hsuan Yu Chen, Jia Jyun Lee, Ke Horng Chen, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

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26 Scopus citations

Abstract

In this article, a monolithically integrated driver fabricated by 12-V depletion mode gallium nitride (dGaN) and enhanced mode GaN (eGaN) driver is proposed. The proposed driver features an internal temperature-compensated (T-compensated) controller to drive an integrated 650-V eGaN power switch. Due to T-compensated characteristics, a slew-rate enhancement driver can be well-controlled by the fast turn-on (FTO) technique which is supplied by an on-chip regulator with reference voltage circuit. Therefore, the Miller plateau voltage can be tracked correctly by the proposed controller so that the switching frequency can be raised up to 50 MHz and the dV DS/dt slew rate can reach 118.3 V/ns for high efficiency and high switching operation.

Original languageEnglish
Pages (from-to)3619 - 3627
Number of pages9
JournalIEEE Journal of Solid-State Circuits
Volume56
Issue number12
DOIs
StatePublished - Dec 2021

Keywords

  • Fast turn-on (FTO) technique
  • Gallium nitride (GaN)
  • miller plateau voltage
  • temperature-compensated (T-compensated)

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