Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D

Wei Li Lee; Chung Chun Hsu; Cheng Ting Chung; Yu Hung Lu; Guang Li Luo; Chao-Hsin Chien

doi:10.1149/2.0101708jss

Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D

Wei Li Lee, Chung Chun Hsu, Cheng Ting Chung, Yu Hung Lu, Guang Li Luo, Chao-Hsin Chien

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

We fabricated a Ge junctionless p-channel metal–oxide–semiconductor field-effect transistor (JL pMOSFET) with a raised metal source/drain (S/D) composed of a metal alloy. An ultrathin-body Ge channel was trimmed to 10 nm, which is lower than the maximum depletion width, to completely switch off the device. The fabricated Ge JL pMOSFET containing a raised Ni/NiGe S/D exhibited a high on/off current ratio (I_on/I_off) value (approximately 10⁵ at V_DS = −0.1 V). The S/D series resistance of the full metal S/D structure was exactly lower than the structures of Ge/NiGe and Ge bulk S/D. Synopsys Technology Computer-Aided Design tools were used to confirm the advantages of the full metal S/D structure and demonstrate the enhancement of the S/D resistance in a device with scaled gate length. The proposed scheme is suitable for reducing the series resistance of a device with minimized dimensions.

Original language	English
Pages (from-to)	P507-P511
Journal	ECS Journal of Solid State Science and Technology
Volume	6
Issue number	8
DOIs	https://doi.org/10.1149/2.0101708jss
State	Published - 1 Jan 2017

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title = "Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D",

abstract = "We fabricated a Ge junctionless p-channel metal–oxide–semiconductor field-effect transistor (JL pMOSFET) with a raised metal source/drain (S/D) composed of a metal alloy. An ultrathin-body Ge channel was trimmed to 10 nm, which is lower than the maximum depletion width, to completely switch off the device. The fabricated Ge JL pMOSFET containing a raised Ni/NiGe S/D exhibited a high on/off current ratio (Ion/Ioff) value (approximately 105 at VDS = −0.1 V). The S/D series resistance of the full metal S/D structure was exactly lower than the structures of Ge/NiGe and Ge bulk S/D. Synopsys Technology Computer-Aided Design tools were used to confirm the advantages of the full metal S/D structure and demonstrate the enhancement of the S/D resistance in a device with scaled gate length. The proposed scheme is suitable for reducing the series resistance of a device with minimized dimensions.",

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T1 - Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D

AU - Lee, Wei Li

AU - Hsu, Chung Chun

AU - Chung, Cheng Ting

AU - Lu, Yu Hung

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We fabricated a Ge junctionless p-channel metal–oxide–semiconductor field-effect transistor (JL pMOSFET) with a raised metal source/drain (S/D) composed of a metal alloy. An ultrathin-body Ge channel was trimmed to 10 nm, which is lower than the maximum depletion width, to completely switch off the device. The fabricated Ge JL pMOSFET containing a raised Ni/NiGe S/D exhibited a high on/off current ratio (Ion/Ioff) value (approximately 105 at VDS = −0.1 V). The S/D series resistance of the full metal S/D structure was exactly lower than the structures of Ge/NiGe and Ge bulk S/D. Synopsys Technology Computer-Aided Design tools were used to confirm the advantages of the full metal S/D structure and demonstrate the enhancement of the S/D resistance in a device with scaled gate length. The proposed scheme is suitable for reducing the series resistance of a device with minimized dimensions.

AB - We fabricated a Ge junctionless p-channel metal–oxide–semiconductor field-effect transistor (JL pMOSFET) with a raised metal source/drain (S/D) composed of a metal alloy. An ultrathin-body Ge channel was trimmed to 10 nm, which is lower than the maximum depletion width, to completely switch off the device. The fabricated Ge JL pMOSFET containing a raised Ni/NiGe S/D exhibited a high on/off current ratio (Ion/Ioff) value (approximately 105 at VDS = −0.1 V). The S/D series resistance of the full metal S/D structure was exactly lower than the structures of Ge/NiGe and Ge bulk S/D. Synopsys Technology Computer-Aided Design tools were used to confirm the advantages of the full metal S/D structure and demonstrate the enhancement of the S/D resistance in a device with scaled gate length. The proposed scheme is suitable for reducing the series resistance of a device with minimized dimensions.

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U2 - 10.1149/2.0101708jss

DO - 10.1149/2.0101708jss

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SN - 2162-8769

VL - 6

SP - P507-P511

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 8

ER -

Fully depleted GeOI-channel junctionless pMOSFET with a low-resistance-raised NiGe alloy S/D

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