Free-standing a-plane GaN substrates grown by HVPE

Yin Hao Wu; Yen Hsien Yeh; Kuei Ming Chen; Yu Jen Yang; Wei-I Lee

doi:10.1117/12.907683

Free-standing a-plane GaN substrates grown by HVPE

Yin Hao Wu^*, Yen Hsien Yeh, Kuei Ming Chen, Yu Jen Yang, Wei-I Lee

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices VII
DOIs	https://doi.org/10.1117/12.907683
State	Published - 2012
Event	Gallium Nitride Materials and Devices VII - San Francisco, CA, United States Duration: 23 Jan 2012 → 26 Jan 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8262
ISSN (Print)	0277-786X

Conference

Conference	Gallium Nitride Materials and Devices VII
Country/Territory	United States
City	San Francisco, CA
Period	23/01/12 → 26/01/12

Keywords

Hydride vapor phase epitaxy
Semiconducting III-V materials
non-polar Gallium Nitride

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10.1117/12.907683

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title = "Free-standing a-plane GaN substrates grown by HVPE",

abstract = "A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.",

keywords = "Hydride vapor phase epitaxy, Semiconducting III-V materials, non-polar Gallium Nitride",

author = "Wu, {Yin Hao} and Yeh, {Yen Hsien} and Chen, {Kuei Ming} and Yang, {Yu Jen} and Wei-I Lee",

year = "2012",

doi = "10.1117/12.907683",

language = "English",

isbn = "9780819489050",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Gallium Nitride Materials and Devices VII",

note = "Gallium Nitride Materials and Devices VII ; Conference date: 23-01-2012 Through 26-01-2012",

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T1 - Free-standing a-plane GaN substrates grown by HVPE

AU - Wu, Yin Hao

AU - Yeh, Yen Hsien

AU - Chen, Kuei Ming

AU - Yang, Yu Jen

AU - Lee, Wei-I

PY - 2012

Y1 - 2012

N2 - A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

AB - A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.

KW - Hydride vapor phase epitaxy

KW - Semiconducting III-V materials

KW - non-polar Gallium Nitride

UR - http://www.scopus.com/inward/record.url?scp=84859594090&partnerID=8YFLogxK

U2 - 10.1117/12.907683

DO - 10.1117/12.907683

M3 - Conference contribution

AN - SCOPUS:84859594090

SN - 9780819489050

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices VII

T2 - Gallium Nitride Materials and Devices VII

Y2 - 23 January 2012 through 26 January 2012

ER -

Free-standing a-plane GaN substrates grown by HVPE

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Keywords

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