@inproceedings{d598230cdcb64f2ca57ad1d4fe499e5f,
title = "Free-standing a-plane GaN substrates grown by HVPE",
abstract = "A-plane free-standing GaN was grown on a-plane GaN templates by HVPE. A-plane GaN templates were grown on r-plane sapphire by MOCVD with multilayer high-low-high temperature AlN buffer layers. A regrowth method was used for growing GaN through HVPE. First, GaN was grown on a-plane GaN templates, followed by separating the a-plane GaN film from r-plane sapphire using LLO. Then, the GaN films were regrown using HVPE. The resulting free-standing GaN contained some voids, which causes to release the stress.",
keywords = "Hydride vapor phase epitaxy, Semiconducting III-V materials, non-polar Gallium Nitride",
author = "Wu, {Yin Hao} and Yeh, {Yen Hsien} and Chen, {Kuei Ming} and Yang, {Yu Jen} and Wei-I Lee",
year = "2012",
doi = "10.1117/12.907683",
language = "English",
isbn = "9780819489050",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Gallium Nitride Materials and Devices VII",
note = "Gallium Nitride Materials and Devices VII ; Conference date: 23-01-2012 Through 26-01-2012",
}