The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.
|Number of pages||4|
|Journal||Japanese journal of applied physics|
|State||Published - May 1995|