Fourier transform infrared spectroscopic study of oxide films grown in pure n2О

Tien-Sheng Chao; Wen Ho Chen; Tan Fu Lei

doi:10.1143/JJAP.34.2370

Fourier transform infrared spectroscopic study of oxide films grown in pure n₂О

Tien-Sheng Chao, Wen Ho Chen, Tan Fu Lei

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The properties of the oxide films grown by pure N₂О were studied in this work. A two-layer model, considering a N₂О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N₂О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

Original language	English
Pages (from-to)	2370-2373
Number of pages	4
Journal	Japanese journal of applied physics
Volume	34
Issue number	5R
DOIs	https://doi.org/10.1143/JJAP.34.2370
State	Published - May 1995

Keywords

Ellipsometer
FTIR
NO
Oxide

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title = "Fourier transform infrared spectroscopic study of oxide films grown in pure n2О",

abstract = "The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 {\AA}.",

keywords = "Ellipsometer, FTIR, NO, Oxide",

author = "Tien-Sheng Chao and Chen, {Wen Ho} and Lei, {Tan Fu}",

year = "1995",

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AU - Chao, Tien-Sheng

AU - Chen, Wen Ho

AU - Lei, Tan Fu

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N2 - The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

AB - The properties of the oxide films grown by pure N2О were studied in this work. A two-layer model, considering a N2О oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2О thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Å.

KW - Ellipsometer

KW - FTIR

KW - NO

KW - Oxide

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EP - 2373

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 5R

ER -

Fourier transform infrared spectroscopic study of oxide films grown in pure n₂О

Abstract

Keywords

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