Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Chun-Hu Cheng; Albert Chin; Hsiao-Hsuan Hsu

doi:10.1166/jnn.2019.16781

Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Chun-Hu Cheng, Albert Chin, Hsiao-Hsuan Hsu^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.

Original language	English
Pages (from-to)	7916-7919
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	19
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2019.16781
State	Published - Dec 2019

Keywords

Resistive Memory
SiGeOx
TiOy
Current Distribution
Switching Power
FLEXIBLE SUBSTRATE

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10.1166/jnn.2019.16781

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title = "Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows",

abstract = "Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.",

keywords = "Resistive Memory, SiGeOx, TiOy, Current Distribution, Switching Power, FLEXIBLE SUBSTRATE",

author = "Chun-Hu Cheng and Albert Chin and Hsiao-Hsuan Hsu",

year = "2019",

month = dec,

doi = "10.1166/jnn.2019.16781",

language = "English",

volume = "19",

pages = "7916--7919",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "12",

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T1 - Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

AU - Cheng, Chun-Hu

AU - Chin, Albert

AU - Hsu, Hsiao-Hsuan

PY - 2019/12

Y1 - 2019/12

N2 - Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.

AB - Optimal device integrity was achieved in Ni/SiGeOx/TiOy/TaN resistive memory by using a formingfree switch with a low switching power of 790 mu W, stable endurance of 10(4) cycles, optimal retention time of 10(5) s, resistance window of at least 1150x, and tight current distributions at 85 degrees C. These characteristics are attributed to the low current switching obtained using SiGeOx with a high oxygen vacancy density and highly defective TiOy grain boundaries.

KW - Resistive Memory

KW - SiGeOx

KW - TiOy

KW - Current Distribution

KW - Switching Power

KW - FLEXIBLE SUBSTRATE

U2 - 10.1166/jnn.2019.16781

DO - 10.1166/jnn.2019.16781

M3 - Article

SN - 1533-4880

VL - 19

SP - 7916

EP - 7919

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 12

ER -

Forming-Free SiGeOx/TiOy Resistive Random Access Memories Featuring Large Current Distribution Windows

Abstract

Keywords

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