Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

Pei-Wen Li; H. K. Liou; E. S. Yang; S. S. Iyer; T. P. Smith; Z. Lu

doi:10.1063/1.106714

Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

Pei-Wen Li^*, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith, Z. Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO ₂ and GeO ₂ . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO ₂ component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

Original language	English
Pages (from-to)	3265-3267
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	26
DOIs	https://doi.org/10.1063/1.106714
State	Published - 1 Dec 1992

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title = "Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma",

abstract = " Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species. ",

author = "Pei-Wen Li and Liou, {H. K.} and Yang, {E. S.} and Iyer, {S. S.} and Smith, {T. P.} and Z. Lu",

year = "1992",

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doi = "10.1063/1.106714",

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T1 - Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

AU - Li, Pei-Wen

AU - Liou, H. K.

AU - Yang, E. S.

AU - Iyer, S. S.

AU - Smith, T. P.

AU - Lu, Z.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

AB - Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500°C. Both Si and Ge are shown to be fully oxidized, forming SiO 2 and GeO 2 . Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500°C, the oxide is stoichiometric and it does not lose its GeO 2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

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VL - 60

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Formation of stoichiometric SiGe oxide by electron cyclotron resonance plasma

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