Formation of stacked nickel-silicide nanocrystals by using a co-mixed target for nonvolatile memory application

Wei Ren Chen, Ting Chang Chang*, Po-Tsun Liu, Chun Hao Tu, Feng Weng Chi, Shu Wei Tsao, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The formation of stacked nickel-silicide nanocrystals by using a co-mixed target is proposed in this paper. High resolution transmission electron microscope analysis clearly shows the stacked nanocrystals embedded in the silicon oxide after rapid thermal oxidation. The obvious memory window can be used to define "1" and "0" states at low voltage operation. In addition, the program/erase characteristics have different charge/discharge efficiency due to the effect of stacked structure. Furthermore, good endurance and retention characteristics are exhibited for nonvolatile memory application. Besides, this technology is suitable for the fabrication of current nonvolatile memory and application of low power device.

Original languageEnglish
Pages (from-to)1292-1296
Number of pages5
JournalSurface and Coatings Technology
Volume202
Issue number4-7
DOIs
StatePublished - 15 Dec 2007

Keywords

  • Metal nanocrystal
  • Nickel-silicide
  • Nonvolatile memory

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