Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

M. C. Kuo; C. S. Yang; P. Y. Tseng; J. Lee; J. L. Shen; Wu-Ching Chou; Y. T. Shih; C. T. Ku; M. C. Lee; Wei-Kuo Chen

doi:10.1016/S0022-0248(02)01421-5

Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

M. C. Kuo, C. S. Yang, P. Y. Tseng, J. Lee, J. L. Shen, Wu-Ching Chou, Y. T. Shih, C. T. Ku, M. C. Lee, Wei-Kuo Chen

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 10⁸/cm² and 10⁹/cm², respectively.

Original language	English
Pages (from-to)	533-537
Number of pages	5
Journal	Journal of Crystal Growth
Volume	242
Issue number	3-4
DOIs	https://doi.org/10.1016/S0022-0248(02)01421-5
State	Published - 1 Jan 2002

Keywords

A1. Atomic force microscopy
A1. Nanostructures
A3. Molecular beam epitaxy
B2. Semiconducting II-IV materials

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10.1016/S0022-0248(02)01421-5

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title = "Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy",

abstract = "Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.",

keywords = "A1. Atomic force microscopy, A1. Nanostructures, A3. Molecular beam epitaxy, B2. Semiconducting II-IV materials",

author = "Kuo, {M. C.} and Yang, {C. S.} and Tseng, {P. Y.} and J. Lee and Shen, {J. L.} and Wu-Ching Chou and Shih, {Y. T.} and Ku, {C. T.} and Lee, {M. C.} and Wei-Kuo Chen",

year = "2002",

month = jan,

day = "1",

doi = "10.1016/S0022-0248(02)01421-5",

language = "English",

volume = "242",

pages = "533--537",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "3-4",

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TY - JOUR

T1 - Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

AU - Kuo, M. C.

AU - Yang, C. S.

AU - Tseng, P. Y.

AU - Lee, J.

AU - Shen, J. L.

AU - Chou, Wu-Ching

AU - Shih, Y. T.

AU - Ku, C. T.

AU - Lee, M. C.

AU - Chen, Wei-Kuo

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.

AB - Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.

KW - A1. Atomic force microscopy

KW - A1. Nanostructures

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting II-IV materials

UR - http://www.scopus.com/inward/record.url?scp=0036645158&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01421-5

DO - 10.1016/S0022-0248(02)01421-5

M3 - Article

AN - SCOPUS:0036645158

SN - 0022-0248

VL - 242

SP - 533

EP - 537

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

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