Formation of nitride laser cavities with cleaved facets on transferred laser diodes on GaAs substrates

Wen Chien Yu*, Shu Mei Ye, Feng Ke Hsiao, Chi Ling Lee, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The samples were then mounted onto thin GaAs substrates using wafer-bonding technology. Laser lift-off (LLO) technique was applied to remove the original sapphire substrate and transfer the GaN laser structure onto GaAs substrates. Since the cubic substrates have well-defined laser cavity cleavage facet, the GaN structures bonded onto the substrates also formed smooth facets after cleavage. The cleaved facets of GaN laser diodes have been characterized using atomic force microscopy (AFM) with less than 2 nm roughness. The present study demonstrated the feasibility of transferring GaN laser structures onto other more appealing substrates for formation of laser cavities.

Original languageEnglish
Pages (from-to)2139-2141
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number6
StatePublished - 1 Dec 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007


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