Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Hsin Chou Liu; Chia Chou Tsai; Li Ting Chang; Tseung-Yuen Tseng; Simon M. Sze; Chun Yen Chang

doi:10.1063/1.2227059

Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Hsin Chou Liu, Chia Chou Tsai, Li Ting Chang, Tseung-Yuen Tseng, Simon M. Sze, Chun Yen Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

Original language	English
Article number	052112
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	5
DOIs	https://doi.org/10.1063/1.2227059
State	Published - 31 Jul 2006

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title = "Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer",

abstract = "The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Liu, {Hsin Chou} and Tsai, {Chia Chou} and Chang, {Li Ting} and Tseung-Yuen Tseng and Sze, {Simon M.} and Chang, {Chun Yen}",

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AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Liu, Hsin Chou

AU - Tsai, Chia Chou

AU - Chang, Li Ting

AU - Tseng, Tseung-Yuen

AU - Sze, Simon M.

AU - Chang, Chun Yen

PY - 2006/7/31

Y1 - 2006/7/31

N2 - The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

AB - The formation of germanium nanocrystals embedded in silicon-oxygen nitride with distributed charge storage elements is proposed in this work. A large memory window is observed due to isolated Ge nanocrystals in the SiON gate stack layer. The Ge nanocrystals were nucleated after high temperature oxidized SiGeN layer. The nonvolatile memory with the Ge nanocrystals embedded in SiON stack layer exhibits 4 V threshold voltage shift under 10 V write operation. Also, the manufacture technology using the sequent high-temperature oxidation of the a-Si layer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.

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U2 - 10.1063/1.2227059

DO - 10.1063/1.2227059

M3 - Article

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VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052112

ER -

Formation of germanium nanocrystals embedded in silicon-oxygen-nitride layer

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