Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Chih Wei Hu*, Ting Chang Chang, Po-Tsun Liu, Chun Hao Tu, Sheng Kai Lee, Simon M. Sze, Chun Yen Chang, Bi Shiou Chiou, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si0.5 Ge0.5). The deposited film was annealed in oxygen ambient at 650 °C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide- silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements.

Original languageEnglish
Article number152115
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number15
DOIs
StatePublished - 2008

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