Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li; W. M. Liao; S. W. Lin; P. S. Chen; S. C. Lu; M. J. Tsai

doi:10.1063/1.1631395

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

Pei-Wen Li^*
, W. M. Liao
, S. W. Lin
, P. S. Chen
, S. C. Lu
, M. J. Tsai

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

An overview is given of the demonstration of a simple and effective method to form nanoscale Ge quantum dots by selective oxidation of SiGe/Si-on-insulator. The size and distribution of the Ge dots are strongly dependent on conditions of thermal oxidation and Ge content in Si_1-xGe_x alloy. The Ge quantum dots formed by this method are embedded within silicon dioxide and would provide great potential for SE and optical devices application.

Original language	English
Pages (from-to)	4628-4630
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	22
DOIs	https://doi.org/10.1063/1.1631395
State	Published - 1 Dec 2003

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abstract = "An overview is given of the demonstration of a simple and effective method to form nanoscale Ge quantum dots by selective oxidation of SiGe/Si-on-insulator. The size and distribution of the Ge dots are strongly dependent on conditions of thermal oxidation and Ge content in Si1-xGex alloy. The Ge quantum dots formed by this method are embedded within silicon dioxide and would provide great potential for SE and optical devices application.",

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AU - Li, Pei-Wen

AU - Liao, W. M.

AU - Lin, S. W.

AU - Chen, P. S.

AU - Lu, S. C.

AU - Tsai, M. J.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - An overview is given of the demonstration of a simple and effective method to form nanoscale Ge quantum dots by selective oxidation of SiGe/Si-on-insulator. The size and distribution of the Ge dots are strongly dependent on conditions of thermal oxidation and Ge content in Si1-xGex alloy. The Ge quantum dots formed by this method are embedded within silicon dioxide and would provide great potential for SE and optical devices application.

AB - An overview is given of the demonstration of a simple and effective method to form nanoscale Ge quantum dots by selective oxidation of SiGe/Si-on-insulator. The size and distribution of the Ge dots are strongly dependent on conditions of thermal oxidation and Ge content in Si1-xGex alloy. The Ge quantum dots formed by this method are embedded within silicon dioxide and would provide great potential for SE and optical devices application.

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DO - 10.1063/1.1631395

M3 - Article

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EP - 4630

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Formation of atomic-scale germanium quantum dots by selective oxidation of SiGe/Si-on-insulator

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