TY - GEN
T1 - Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique
AU - Chien, C. Y.
AU - Chang, Y. R.
AU - Chang, R. N.
AU - Lee, M. S.
AU - Li, Pei-Wen
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Placement of quantum dots (QDs) and insight into QD's basic internal structure and optical properties lay nature cornerstones for advanced photonic devices. We report a manageable growth method for placing dense three-dimensional Ge QD arrays in a uniform or a grading size distribution, using thermal oxidation of poly-SiGe in layer-cake techniques. The QD size and spatial density in each stack could be well modulated by Ge content in poly-Si1-xGex, oxidation and underlay buffer layer conditions. Size-dependent internal structure, strain, and photoluminesce properties of Ge QDs are systematically investigated. Optimization of processing conditions was carried out for producing dense Ge QD arrays for maximizing photovoltaic efficiency.
AB - Placement of quantum dots (QDs) and insight into QD's basic internal structure and optical properties lay nature cornerstones for advanced photonic devices. We report a manageable growth method for placing dense three-dimensional Ge QD arrays in a uniform or a grading size distribution, using thermal oxidation of poly-SiGe in layer-cake techniques. The QD size and spatial density in each stack could be well modulated by Ge content in poly-Si1-xGex, oxidation and underlay buffer layer conditions. Size-dependent internal structure, strain, and photoluminesce properties of Ge QDs are systematically investigated. Optimization of processing conditions was carried out for producing dense Ge QD arrays for maximizing photovoltaic efficiency.
UR - http://www.scopus.com/inward/record.url?scp=79951844205&partnerID=8YFLogxK
U2 - 10.1109/NANO.2010.5697842
DO - 10.1109/NANO.2010.5697842
M3 - Conference contribution
AN - SCOPUS:79951844205
SN - 9781424470334
T3 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
SP - 924
EP - 927
BT - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
T2 - 2010 10th IEEE Conference on Nanotechnology, NANO 2010
Y2 - 17 August 2010 through 20 August 2010
ER -
