Fluorinated HfO 2 gate dielectrics engineering for CMOS by pre-and post-CF 4 plasma passivation

Woei Cherng Wu; Chao Sung Lai; Shih Ching Lee; Ma Ming-Wen; Tien-Sheng Chao; Jer Chyi Wang; Chih Wei Hsu; Pai Chi Chou; Jian Hao Chen; Kuo Hsing Kao; Wen Cheng Lo; Tsung Yi Lu; Li Lin Tay; Nelson Rowell

doi:10.1109/IEDM.2008.4796706

Fluorinated HfO ₂ gate dielectrics engineering for CMOS by pre-and post-CF ₄ plasma passivation

Woei Cherng Wu, Chao Sung Lai^*, Shih Ching Lee, Ma Ming-Wen, Tien-Sheng Chao, Jer Chyi Wang, Chih Wei Hsu, Pai Chi Chou, Jian Hao Chen, Kuo Hsing Kao, Wen Cheng Lo, Tsung Yi Lu, Li Lin Tay, Nelson Rowell

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

In this paper, we demonstrate TaN/Fluorinated HfO ₂ CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO ₂ interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796706
State	Published - 1 Dec 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

Access to Document

10.1109/IEDM.2008.4796706

Cite this

Wu, W. C., Lai, C. S., Lee, S. C., Ming-Wen, M., Chao, T.-S., Wang, J. C., Hsu, C. W., Chou, P. C., Chen, J. H., Kao, K. H., Lo, W. C., Lu, T. Y., Tay, L. L., & Rowell, N. (2008). Fluorinated HfO ₂ gate dielectrics engineering for CMOS by pre-and post-CF ₄ plasma passivation. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796706 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796706

@inproceedings{022b775905de439c838db78858aae522,

title = "Fluorinated HfO 2 gate dielectrics engineering for CMOS by pre-and post-CF 4 plasma passivation",

abstract = " In this paper, we demonstrate TaN/Fluorinated HfO 2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO 2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements. ",

author = "Wu, {Woei Cherng} and Lai, {Chao Sung} and Lee, {Shih Ching} and Ma Ming-Wen and Tien-Sheng Chao and Wang, {Jer Chyi} and Hsu, {Chih Wei} and Chou, {Pai Chi} and Chen, {Jian Hao} and Kao, {Kuo Hsing} and Lo, {Wen Cheng} and Lu, {Tsung Yi} and Tay, {Li Lin} and Nelson Rowell",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/IEDM.2008.4796706",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Wu, WC, Lai, CS, Lee, SC, Ming-Wen, M, Chao, T-S, Wang, JC, Hsu, CW, Chou, PC, Chen, JH, Kao, KH, Lo, WC, Lu, TY, Tay, LL & Rowell, N 2008, Fluorinated HfO ₂ gate dielectrics engineering for CMOS by pre-and post-CF ₄ plasma passivation. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796706, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796706

Fluorinated HfO ₂ gate dielectrics engineering for CMOS by pre-and post-CF ₄ plasma passivation. / Wu, Woei Cherng; Lai, Chao Sung; Lee, Shih Ching et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796706 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lai, Chao Sung

AU - Lee, Shih Ching

AU - Ming-Wen, Ma

AU - Chao, Tien-Sheng

AU - Wang, Jer Chyi

AU - Hsu, Chih Wei

AU - Chou, Pai Chi

AU - Chen, Jian Hao

AU - Kao, Kuo Hsing

AU - Lo, Wen Cheng

AU - Lu, Tsung Yi

AU - Tay, Li Lin

AU - Rowell, Nelson

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AB - In this paper, we demonstrate TaN/Fluorinated HfO 2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO 2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively. A physical model of shallow and deep trapping level affected by fluorine was proposed to explain the NBTI and PBTI improvements.

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