Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation

Woei Cherng Wu; Chao Sung Lai; Huai Hsien Chiu; Jer Chyi Wang; Pai Chi Chou; Tien-Sheng Chao

doi:10.1109/ESSDERC.2010.5618191

Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation

Woei Cherng Wu^*, Chao Sung Lai, Huai Hsien Chiu, Jer Chyi Wang, Pai Chi Chou, Tien-Sheng Chao

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Fluorine distribution engineering in HfO₂ to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

Original language	English
Title of host publication	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010
Pages	416-419
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDERC.2010.5618191
State	Published - 15 Dec 2010
Event	2010 European Solid State Device Research Conference, ESSDERC 2010 - Sevilla, Spain Duration: 14 Sep 2010 → 16 Sep 2010

Publication series

Name	2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Conference

Conference	2010 European Solid State Device Research Conference, ESSDERC 2010
Country/Territory	Spain
City	Sevilla
Period	14/09/10 → 16/09/10

Access to Document

10.1109/ESSDERC.2010.5618191

Cite this

Wu, W. C., Lai, C. S., Chiu, H. H., Wang, J. C., Chou, P. C., & Chao, T.-S. (2010). Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010 (pp. 416-419). Article 5618191 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). https://doi.org/10.1109/ESSDERC.2010.5618191

Wu, Woei Cherng ; Lai, Chao Sung ; Chiu, Huai Hsien et al. / Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. pp. 416-419 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

@inproceedings{be70e15845eb48a4a4193493193713e8,

title = "Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 Plasma Passivation",

abstract = "Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.",

author = "Wu, {Woei Cherng} and Lai, {Chao Sung} and Chiu, {Huai Hsien} and Wang, {Jer Chyi} and Chou, {Pai Chi} and Tien-Sheng Chao",

year = "2010",

month = dec,

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doi = "10.1109/ESSDERC.2010.5618191",

language = "English",

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series = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

pages = "416--419",

booktitle = "2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010",

note = "2010 European Solid State Device Research Conference, ESSDERC 2010 ; Conference date: 14-09-2010 Through 16-09-2010",

}

Wu, WC, Lai, CS, Chiu, HH, Wang, JC, Chou, PC & Chao, T-S 2010, Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. in 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010., 5618191, 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010, pp. 416-419, 2010 European Solid State Device Research Conference, ESSDERC 2010, Sevilla, Spain, 14/09/10. https://doi.org/10.1109/ESSDERC.2010.5618191

Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. / Wu, Woei Cherng; Lai, Chao Sung; Chiu, Huai Hsien et al.
2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 416-419 5618191 (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - Fluorine distribution engineering in HfO2 to get higher performance (HP EOT=1.2nm) and low stand-by power (LSTP EOT=1.8nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.

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Wu WC, Lai CS, Chiu HH, Wang JC, Chou PC, Chao TS. Fluorinated CMOS HfO₂ for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF₄ Plasma Passivation. In 2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010. 2010. p. 416-419. 5618191. (2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010). doi: 10.1109/ESSDERC.2010.5618191