Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases

Kuo Liang Yeh*, Chih You Ku, Wei Lun Hong, Jyh-Chyurn Guo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    2 Scopus citations

    Abstract

    The uni-axial compressive strain from e-SiGe S/D combined with dynamic body biases effect on flicker noise of pMOSFETs is presented in this paper. This compressive strain contributes higher mobility but the worse flicker noise in terms of higher SID/ID2 becomes a potential killer to RF/analog circuits. Forward body biases (FBB) can reduce the flicker noise but the degraded body bias effect in strained pMOSFETs makes it not as efficient as the standard ones without strain. Hooge's mobility fluctuation model is adopted to explain the uni-axial strain and dynamic body biases effect on flicker noise. The increase of Hooge parameter αH is identified the key factor responsible the degraded flicker noise in strained pMOSFETs.

    Original languageEnglish
    Title of host publicationProceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
    Pages347-350
    Number of pages4
    DOIs
    StatePublished - 27 Oct 2009
    Event2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States
    Duration: 7 Jun 20099 Jun 2009

    Publication series

    NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
    ISSN (Print)1529-2517

    Conference

    Conference2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
    Country/TerritoryUnited States
    CityBoston, MA
    Period7/06/099/06/09

    Keywords

    • Body bias
    • Flicker noise
    • Mobility
    • pMOSFET
    • Strain

    Fingerprint

    Dive into the research topics of 'Flicker noise in nanoscale pMOSFETs with mobility enhancement engineering and dynamic body biases'. Together they form a unique fingerprint.

    Cite this