Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

Sailesh Rajasekaran; Firman Mangasa Simanjuntak; Sridhar Chandrasekaran; Debashis Panda; Aftab Saleem; Tseung Yuen Tseng

doi:10.1109/LED.2021.3127489

Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

Sailesh Rajasekaran, Firman Mangasa Simanjuntak, Sridhar Chandrasekaran, Debashis Panda, Aftab Saleem, Tseung Yuen Tseng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this letter, Ta2O5/WO3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO3 layer modulates the oxygen vacancy distribution in Ta2O5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>109 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 104 cycles with 4 mm bending, stable retention (>106 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta2O5/WO3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.

Original language	English
Journal	Ieee Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2021.3127489
State	Accepted/In press - 2021

Keywords

Artificial neural networks
Bending
Depression
Face recognition
Flexible electronics
Memristors
Neuromorphics
Performance evaluation
resistive synapse
Switches
Synapses

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10.1109/LED.2021.3127489

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@article{3ae7956f42ba4b19b6d60bf30f42575f,

title = "Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications",

abstract = "In this letter, Ta2O5/WO3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO3 layer modulates the oxygen vacancy distribution in Ta2O5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>109 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 104 cycles with 4 mm bending, stable retention (>106 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta2O5/WO3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.",

keywords = "Artificial neural networks, Bending, Depression, Face recognition, Flexible electronics, Memristors, Neuromorphics, Performance evaluation, resistive synapse, Switches, Synapses",

author = "Sailesh Rajasekaran and Simanjuntak, {Firman Mangasa} and Sridhar Chandrasekaran and Debashis Panda and Aftab Saleem and Tseng, {Tseung Yuen}",

note = "Publisher Copyright: IEEE",

year = "2021",

doi = "10.1109/LED.2021.3127489",

language = "English",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Rajasekaran, Sailesh

AU - Simanjuntak, Firman Mangasa

AU - Chandrasekaran, Sridhar

AU - Panda, Debashis

AU - Saleem, Aftab

AU - Tseng, Tseung Yuen

N1 - Publisher Copyright: IEEE

PY - 2021

Y1 - 2021

N2 - In this letter, Ta2O5/WO3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO3 layer modulates the oxygen vacancy distribution in Ta2O5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>109 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 104 cycles with 4 mm bending, stable retention (>106 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta2O5/WO3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.

AB - In this letter, Ta2O5/WO3 double-layer wearable memristor synapse has excellent recognition accuracy (97%) for just 12 epochs compared to the single-layer device (83%). The insertion of an ultra-thin WO3 layer modulates the oxygen vacancy distribution in Ta2O5 and induces digital-to-analog switching behavior. Excellent AC endurance of (>109 cycles) under 2 mm extreme bending, a rapid speed (25 ns), reliable bending endurance for 104 cycles with 4 mm bending, stable retention (>106 s) up to 200°C, and water-resistant behavior are achieved. The potentiation, and depression having outstanding nonlinearity (0.64) is obtained. The Ta2O5/WO3 design is a promising candidate for wearable neuromorphic applications due to its wearability, flexibility, lightweight, low cost and environmental friendly fabrication.

KW - Artificial neural networks

KW - Bending

KW - Depression

KW - Face recognition

KW - Flexible electronics

KW - Memristors

KW - Neuromorphics

KW - Performance evaluation

KW - resistive synapse

KW - Switches

KW - Synapses

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U2 - 10.1109/LED.2021.3127489

DO - 10.1109/LED.2021.3127489

M3 - Article

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SN - 0741-3106

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

Flexible Ta2O5/WO3-Based Memristor Synapse for Wearable and Neuromorphic Applications

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Keywords

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