Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility

Yang Shun Fan; Ching Hui Hsu; Chih Hsiang Chang; Wei Hsun Huang; Ming Chang Yu; Po-Tsun Liu

Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility

Yang Shun Fan, Ching Hui Hsu, Chih Hsiang Chang, Wei Hsun Huang, Ming Chang Yu, Po-Tsun Liu

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 ⁴ pulse endurance, 10 ⁴ s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	1820-1821
Number of pages	2
State	Published - 1 Dec 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 4 Dec 2012 → 7 Dec 2012

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	4/12/12 → 7/12/12

Keywords

Flexible
IGZO
Non-volatile Memory
Reliability
RRAM

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

@inproceedings{e14af533b38f4b70aa8e1cf2be1096c1,

title = "Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility",

abstract = " The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 4 pulse endurance, 10 4 s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications. ",

keywords = "Flexible, IGZO, Non-volatile Memory, Reliability, RRAM",

author = "Fan, {Yang Shun} and Hsu, {Ching Hui} and Chang, {Chih Hsiang} and Huang, {Wei Hsun} and Yu, {Ming Chang} and Po-Tsun Liu",

year = "2012",

month = dec,

day = "1",

language = "English",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "1820--1821",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

note = "19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Fan, YS, Hsu, CH, Chang, CH, Huang, WH, Yu, MC & Liu, P-T 2012, Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 3, pp. 1820-1821, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 4/12/12.

Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility. / Fan, Yang Shun; Hsu, Ching Hui; Chang, Chih Hsiang et al.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 1820-1821 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility

AU - Fan, Yang Shun

AU - Hsu, Ching Hui

AU - Chang, Chih Hsiang

AU - Huang, Wei Hsun

AU - Yu, Ming Chang

AU - Liu, Po-Tsun

PY - 2012/12/1

Y1 - 2012/12/1

N2 - The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 4 pulse endurance, 10 4 s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.

AB - The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10 4 pulse endurance, 10 4 s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.

KW - Flexible

KW - IGZO

KW - Non-volatile Memory

KW - Reliability

KW - RRAM

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M3 - Conference contribution

AN - SCOPUS:84885924559

SN - 9781627486521

T3 - Proceedings of the International Display Workshops

SP - 1820

EP - 1821

BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012

Y2 - 4 December 2012 through 7 December 2012

ER -

Flexible non-volatile memory based on indium-gallium-zinc-oxide with excellent reliability and flexibility

Abstract

Publication series

Conference

Keywords

UN SDGs

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