Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films

Jagan Singh Meena; Min Ching Chu; Fu-Hsiang Ko

doi:10.1109/INEC.2010.5425076

Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films

Jagan Singh Meena, Min Ching Chu, Fu-Hsiang Ko^*

^*Corresponding author for this work

Institute of Nonotechnology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSi_xO_y) and hafnium-silicate (HfSi_mO_n) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10^-9 Acm^-2 at 5V and maximum- capacitance densities 12.10 (ZrSi_xO_y) and 14.32 fF/μm² (HfSi _mO_n), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	992-993
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5425076
State	Published - 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Publication series

Name	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

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10.1109/INEC.2010.5425076

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Meena, J. S., Chu, M. C., & Ko, F.-H. (2010). Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 992-993). Article 5425076 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5425076

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title = "Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films",

abstract = "To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10-9 Acm-2 at 5V and maximum- capacitance densities 12.10 (ZrSixOy) and 14.32 fF/μm2 (HfSi mOn), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.",

author = "Meena, {Jagan Singh} and Chu, {Min Ching} and Fu-Hsiang Ko",

year = "2010",

doi = "10.1109/INEC.2010.5425076",

language = "English",

isbn = "9781424435449",

series = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

pages = "992--993",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Meena, JS, Chu, MC & Ko, F-H 2010, Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5425076, INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings, pp. 992-993, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 3/01/10. https://doi.org/10.1109/INEC.2010.5425076

Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films. / Meena, Jagan Singh; Chu, Min Ching; Ko, Fu-Hsiang.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 992-993 5425076 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chu, Min Ching

AU - Ko, Fu-Hsiang

PY - 2010

Y1 - 2010

N2 - To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10-9 Acm-2 at 5V and maximum- capacitance densities 12.10 (ZrSixOy) and 14.32 fF/μm2 (HfSi mOn), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.

AB - To the first time, we have fabricated metal-insulator-metal (MIM) capacitors using 10-nm-thick zirconium-silicate (ZrSixOy) and hafnium-silicate (HfSimOn) thin dielectric films on the flexible polyimide substrate by sol-gel process. The sol-gel films were oxidized by employing oxygen plasma to enhance the electrical performance at low temperature (∼250 °C). The oxygen plasma may accept as most effective process at low temperature to surface oxidation of a dielectric film for flexible organic device. The results showed the satisfactory electrical characteristics for the corresponding films with low leakage current densities ∼10-9 Acm-2 at 5V and maximum- capacitance densities 12.10 (ZrSixOy) and 14.32 fF/μm2 (HfSi mOn), at 1MHz. These entire make the combinatorial thin oxide films based MIM capacitors to be very suitable for future flexible devices.

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Flexible MIM capacitors using zirconium-silicate and hafnium-silicate as gate-dielectric films

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