Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845)

Chao Feng Sung; Dhananjay Kekuda; Li Fen Chu; Yuh Zheng Lee; Fang-Chung Chen; Meng Chyi Wu; Chih Wei Chu

doi:10.1002/adma.201090151

Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845)

Chao Feng Sung, Dhananjay Kekuda, Li Fen Chu, Yuh Zheng Lee, Fang-Chung Chen, Meng Chyi Wu, Chih Wei Chu^*

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	CP33-CP33
Number of pages	1
Journal	Advanced Materials
Volume	22
Issue number	45
DOIs	https://doi.org/10.1002/adma.201090151
State	Published - 1 Dec 2010

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10.1002/adma.201090151

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Sung, C. F., Kekuda, D., Chu, L. F., Lee, Y. Z., Chen, F.-C., Wu, M. C., & Chu, C. W. (2010). Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) . Advanced Materials, 22(45), CP33-CP33. https://doi.org/10.1002/adma.201090151

@article{b8670358e0b942fca3ab8ac0948c8d46,

title = "Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) ",

author = "Sung, {Chao Feng} and Dhananjay Kekuda and Chu, {Li Fen} and Lee, {Yuh Zheng} and Fang-Chung Chen and Wu, {Meng Chyi} and Chu, {Chih Wei}",

year = "2010",

month = dec,

day = "1",

doi = "10.1002/adma.201090151",

language = "English",

volume = "22",

pages = "CP33--CP33",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "45",

}

Sung, CF, Kekuda, D, Chu, LF, Lee, YZ, Chen, F-C, Wu, MC & Chu, CW 2010, 'Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) ', Advanced Materials, vol. 22, no. 45, pp. CP33-CP33. https://doi.org/10.1002/adma.201090151

Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845) . / Sung, Chao Feng; Kekuda, Dhananjay; Chu, Li Fen et al.
In: Advanced Materials, Vol. 22, No. 45, 01.12.2010, p. CP33-CP33.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)

T2 - Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845)

AU - Sung, Chao Feng

AU - Kekuda, Dhananjay

AU - Chu, Li Fen

AU - Lee, Yuh Zheng

AU - Chen, Fang-Chung

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2010/12/1

Y1 - 2010/12/1

UR - http://www.scopus.com/inward/record.url?scp=78649833519&partnerID=8YFLogxK

U2 - 10.1002/adma.201090151

DO - 10.1002/adma.201090151

M3 - Comment/debate

AN - SCOPUS:78649833519

SN - 0935-9648

VL - 22

SP - CP33-CP33

JO - Advanced Materials

JF - Advanced Materials

IS - 45

ER -

Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009): Flexible fullerene field-effect transistors fabricated through solution processing (Advanced Materials (2009) 21 (4845)

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