Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

Ming Hsuan Kao; Wei Hsiang Chen; Po Cheng Hou; Wen Hsien Huang; Chang Hong Shen; Jia Min Shieh; Wen Kuan Yeh

doi:10.1109/VLSITechnology18217.2020.9265079

Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

Ming Hsuan Kao, Wei Hsiang Chen, Po Cheng Hou, Wen Hsien Huang, Chang Hong Shen, Jia Min Shieh, Wen Kuan Yeh

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

For the first time, below 400°C-fabricated poly-Si MOSFETs and 6T -SRAM fabrication process was demonstrated on polyimide (PI) substrate for flexible and transparent monolithic 3DIC. Key enablers are 400-900 nm transparent laser-stop layer (LsL), laser-crystallized/CMP-thinned poly Si channel and pulse UV-laser S/D activation. These advanced low thermal budget fabrication technologies enable stackable polySi MOSFETs on flexible 6' -wafer-scale PI substrate with high device uniformity (Vth 'SS16.2%/16.6%) and bending stability (Vth/SS\sim 4.2\%/9.8\%) after cycle-bending at radius of 10mm. Such CMOS compatible technologies envision flexible 3D heterogeneous integration of circuits/optical sensors for human-skin adaptable Internet of Things (IoT) chips.

Original language	English
Title of host publication	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728164601
DOIs	https://doi.org/10.1109/VLSITechnology18217.2020.9265079
State	Published - Jun 2020
Event	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States Duration: 16 Jun 2020 → 19 Jun 2020

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2020-June
ISSN (Print)	0743-1562

Conference

Conference	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
Country/Territory	United States
City	Honolulu
Period	16/06/20 → 19/06/20

Keywords

flexible
inverter
laser
monolithic 3DIC
SRAM

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10.1109/VLSITechnology18217.2020.9265079

Cite this

Kao, M. H., Chen, W. H., Hou, P. C., Huang, W. H., Shen, C. H., Shieh, J. M., & Yeh, W. K. (2020). Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings Article 9265079 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnology18217.2020.9265079

@inproceedings{8bcfbd203411418d8423c3f2670fc213,

title = "Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips",

abstract = "For the first time, below 400°C-fabricated poly-Si MOSFETs and 6T -SRAM fabrication process was demonstrated on polyimide (PI) substrate for flexible and transparent monolithic 3DIC. Key enablers are 400-900 nm transparent laser-stop layer (LsL), laser-crystallized/CMP-thinned poly Si channel and pulse UV-laser S/D activation. These advanced low thermal budget fabrication technologies enable stackable polySi MOSFETs on flexible 6' -wafer-scale PI substrate with high device uniformity (Vth 'SS16.2%/16.6%) and bending stability (Vth/SS\sim 4.2\%/9.8\%) after cycle-bending at radius of 10mm. Such CMOS compatible technologies envision flexible 3D heterogeneous integration of circuits/optical sensors for human-skin adaptable Internet of Things (IoT) chips. ",

keywords = "flexible, inverter, laser, monolithic 3DIC, SRAM",

author = "Kao, {Ming Hsuan} and Chen, {Wei Hsiang} and Hou, {Po Cheng} and Huang, {Wen Hsien} and Shen, {Chang Hong} and Shieh, {Jia Min} and Yeh, {Wen Kuan}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 ; Conference date: 16-06-2020 Through 19-06-2020",

year = "2020",

month = jun,

doi = "10.1109/VLSITechnology18217.2020.9265079",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings",

address = "美國",

}

Kao, MH, Chen, WH, Hou, PC, Huang, WH, Shen, CH, Shieh, JM & Yeh, WK 2020, Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips. in 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings., 9265079, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Honolulu, United States, 16/06/20. https://doi.org/10.1109/VLSITechnology18217.2020.9265079

Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips. / Kao, Ming Hsuan; Chen, Wei Hsiang; Hou, Po Cheng et al.
2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9265079 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

AU - Kao, Ming Hsuan

AU - Chen, Wei Hsiang

AU - Hou, Po Cheng

AU - Huang, Wen Hsien

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Yeh, Wen Kuan

PY - 2020/6

Y1 - 2020/6

N2 - For the first time, below 400°C-fabricated poly-Si MOSFETs and 6T -SRAM fabrication process was demonstrated on polyimide (PI) substrate for flexible and transparent monolithic 3DIC. Key enablers are 400-900 nm transparent laser-stop layer (LsL), laser-crystallized/CMP-thinned poly Si channel and pulse UV-laser S/D activation. These advanced low thermal budget fabrication technologies enable stackable polySi MOSFETs on flexible 6' -wafer-scale PI substrate with high device uniformity (Vth 'SS16.2%/16.6%) and bending stability (Vth/SS\sim 4.2\%/9.8\%) after cycle-bending at radius of 10mm. Such CMOS compatible technologies envision flexible 3D heterogeneous integration of circuits/optical sensors for human-skin adaptable Internet of Things (IoT) chips.

AB - For the first time, below 400°C-fabricated poly-Si MOSFETs and 6T -SRAM fabrication process was demonstrated on polyimide (PI) substrate for flexible and transparent monolithic 3DIC. Key enablers are 400-900 nm transparent laser-stop layer (LsL), laser-crystallized/CMP-thinned poly Si channel and pulse UV-laser S/D activation. These advanced low thermal budget fabrication technologies enable stackable polySi MOSFETs on flexible 6' -wafer-scale PI substrate with high device uniformity (Vth 'SS16.2%/16.6%) and bending stability (Vth/SS\sim 4.2\%/9.8\%) after cycle-bending at radius of 10mm. Such CMOS compatible technologies envision flexible 3D heterogeneous integration of circuits/optical sensors for human-skin adaptable Internet of Things (IoT) chips.

KW - flexible

KW - inverter

KW - laser

KW - monolithic 3DIC

KW - SRAM

UR - http://www.scopus.com/inward/record.url?scp=85098136112&partnerID=8YFLogxK

U2 - 10.1109/VLSITechnology18217.2020.9265079

DO - 10.1109/VLSITechnology18217.2020.9265079

M3 - Conference contribution

AN - SCOPUS:85098136112

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020

Y2 - 16 June 2020 through 19 June 2020

ER -

Kao MH, Chen WH, Hou PC, Huang WH, Shen CH, Shieh JM et al. Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips. In 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9265079. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnology18217.2020.9265079

Flexible and Transparent BEOL Monolithic 3DIC Technology for Human Skin Adaptable Internet of Things Chips

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Keywords

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