TY - GEN
T1 - Flash memory scaling
T2 - Materials Science and Technology for Nonvolatile Memories
AU - Hou, Tuo-Hung
AU - Lee, Jaegoo
AU - Shaw, Jonathan T.
AU - Kan, Edwin C.
PY - 2008/3
Y1 - 2008/3
N2 - Below the 65-nm technology node, scaling of Flash memory, NAND, NOR or embedded, needs smart and heterogeneous integration of materials in the entire device structure. In addition to maintaining retention, in the order of importance, we need to continuously make functional density (bits/cm 2) higher, cycling endurance longer, program/erase (P/E) voltage lower (negated by the read disturbance, multi-level possibility and noise margin), and P/E time faster (helped by inserting SRAM buffer at system interface). From both theory and experiments, we will compare the advantages and disadvantages in various material choices in view of 3D electrostatics, quantum transport and CMOS process compatibility.
AB - Below the 65-nm technology node, scaling of Flash memory, NAND, NOR or embedded, needs smart and heterogeneous integration of materials in the entire device structure. In addition to maintaining retention, in the order of importance, we need to continuously make functional density (bits/cm 2) higher, cycling endurance longer, program/erase (P/E) voltage lower (negated by the read disturbance, multi-level possibility and noise margin), and P/E time faster (helped by inserting SRAM buffer at system interface). From both theory and experiments, we will compare the advantages and disadvantages in various material choices in view of 3D electrostatics, quantum transport and CMOS process compatibility.
UR - http://www.scopus.com/inward/record.url?scp=55849125777&partnerID=8YFLogxK
U2 - 10.1557/PROC-1071-F02-01
DO - 10.1557/PROC-1071-F02-01
M3 - Conference contribution
AN - SCOPUS:55849125777
SN - 9781605110417
T3 - Materials Research Society Symposium Proceedings
SP - 3
EP - 15
BT - Materials Research Society Symposium Proceedings - Materials Science and Technology for Nonvolatile Memories
PB - Materials Research Society
Y2 - 24 March 2008 through 27 March 2008
ER -