Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Chao Ching Cheng; Chao-Hsin Chien; Guang Li Luo; Jun Cheng Liu; Yi Cheng Chen; Yao Feng Chang; Shin Yuan Wang; Chi Chung Kei; Chien Nan Hsiao; Chun Yen Chang

doi:10.1116/1.3058724

Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

Chao Ching Cheng^*, Chao-Hsin Chien, Guang Li Luo, Jun Cheng Liu, Yi Cheng Chen, Yao Feng Chang, Shin Yuan Wang, Chi Chung Kei, Chien Nan Hsiao, Chun Yen Chang

^*Corresponding author for this work

International College of Semiconductor Technology

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15 Scopus citations

Abstract

The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements.

Original language	English
Pages (from-to)	130-133
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	1
DOIs	https://doi.org/10.1116/1.3058724
State	Published - 2009

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Cheng, C. C., Chien, C.-H., Luo, G. L., Liu, J. C., Chen, Y. C., Chang, Y. F., Wang, S. Y., Kei, C. C., Hsiao, C. N., & Chang, C. Y. (2009). Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(1), 130-133. https://doi.org/10.1116/1.3058724

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title = "Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor",

abstract = "The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements.",

author = "Cheng, {Chao Ching} and Chao-Hsin Chien and Luo, {Guang Li} and Liu, {Jun Cheng} and Chen, {Yi Cheng} and Chang, {Yao Feng} and Wang, {Shin Yuan} and Kei, {Chi Chung} and Hsiao, {Chien Nan} and Chang, {Chun Yen}",

year = "2009",

doi = "10.1116/1.3058724",

language = "English",

volume = "27",

pages = "130--133",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "1",

}

Cheng, CC, Chien, C-H, Luo, GL, Liu, JC, Chen, YC, Chang, YF, Wang, SY, Kei, CC, Hsiao, CN & Chang, CY 2009, 'Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 27, no. 1, pp. 130-133. https://doi.org/10.1116/1.3058724

Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor. / Cheng, Chao Ching; Chien, Chao-Hsin; Luo, Guang Li et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 1, 2009, p. 130-133.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

AU - Cheng, Chao Ching

AU - Chien, Chao-Hsin

AU - Luo, Guang Li

AU - Liu, Jun Cheng

AU - Chen, Yi Cheng

AU - Chang, Yao Feng

AU - Wang, Shin Yuan

AU - Kei, Chi Chung

AU - Hsiao, Chien Nan

AU - Chang, Chun Yen

PY - 2009

Y1 - 2009

N2 - The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements.

AB - The authors present a linear-regression method based on a five-element circuit model to correct measured capacitance-voltage and conductance-voltage curves. This model explains the effects of series resistance and parasitic capacitance/inductance on the frequency dispersion of measured capacitance and the magnification of measured conductance. These extracted parasitic components show significant dependencies on the geometry of capacitor structure, thereby causing different frequency-dependent capacitance characteristics in measurements.

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U2 - 10.1116/1.3058724

DO - 10.1116/1.3058724

M3 - Article

AN - SCOPUS:59949100371

SN - 1071-1023

VL - 27

SP - 130

EP - 133

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

ER -

Five-element circuit model using linear-regression method to correct the admittance measurement of metal-oxide-semiconductor capacitor

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