First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

Fu Kuo Hsueh; Chang Hong Shen; Jia Min Shieh; Kai Shin Li; Hsiu Chih Chen; Wen Hsien Huang; Hsing Hsiang Wang; Chih Chao Yang; Tung Ying Hsieh; Chang Hsien Lin; Bo Yuan Chen; Yu Shao Shiao; Guo Wei Huang; Oi Ying Wong; Po-Hung Chen; Wen Kuan Yeh

doi:10.1109/IEDM.2016.7838030

First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

Fu Kuo Hsueh, Chang Hong Shen, Jia Min Shieh, Kai Shin Li, Hsiu Chih Chen, Wen Hsien Huang, Hsing Hsiang Wang, Chih Chao Yang, Tung Ying Hsieh, Chang Hsien Lin, Bo Yuan Chen, Yu Shao Shiao, Guo Wei Huang, Oi Ying Wong, Po-Hung Chen, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D⁺-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D⁺ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO₂ far-infrared laser annealing (CO₂-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D⁺IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D⁺ IoT chip.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2.3.1-2.3.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838030
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

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10.1109/IEDM.2016.7838030

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Hsueh, F. K., Shen, C. H., Shieh, J. M., Li, K. S., Chen, H. C., Huang, W. H., Wang, H. H., Yang, C. C., Hsieh, T. Y., Lin, C. H., Chen, B. Y., Shiao, Y. S., Huang, G. W., Wong, O. Y., Chen, P-H., & Yeh, W. K. (2017). First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 2.3.1-2.3.4). [7838030] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838030

Hsueh, Fu Kuo ; Shen, Chang Hong ; Shieh, Jia Min et al. / First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 2.3.1-2.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{3757bfc93ae245249c7fb690108b3c91,

title = "First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM",

abstract = "For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D+ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser annealing (CO2-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D+IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D+ IoT chip.",

author = "Hsueh, {Fu Kuo} and Shen, {Chang Hong} and Shieh, {Jia Min} and Li, {Kai Shin} and Chen, {Hsiu Chih} and Huang, {Wen Hsien} and Wang, {Hsing Hsiang} and Yang, {Chih Chao} and Hsieh, {Tung Ying} and Lin, {Chang Hsien} and Chen, {Bo Yuan} and Shiao, {Yu Shao} and Huang, {Guo Wei} and Wong, {Oi Ying} and Po-Hung Chen and Yeh, {Wen Kuan}",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838030",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2.3.1--2.3.4",

booktitle = "2016 IEEE International Electron Devices Meeting, IEDM 2016",

address = "United States",

note = "null ; Conference date: 03-12-2016 Through 07-12-2016",

}

Hsueh, FK, Shen, CH, Shieh, JM, Li, KS, Chen, HC, Huang, WH, Wang, HH, Yang, CC, Hsieh, TY, Lin, CH, Chen, BY, Shiao, YS, Huang, GW, Wong, OY, Chen, P-H & Yeh, WK 2017, First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838030, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 2.3.1-2.3.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838030

First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM. / Hsueh, Fu Kuo; Shen, Chang Hong; Shieh, Jia Min et al.

2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 2.3.1-2.3.4 7838030 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hsueh, Fu Kuo

AU - Shen, Chang Hong

AU - Shieh, Jia Min

AU - Li, Kai Shin

AU - Chen, Hsiu Chih

AU - Huang, Wen Hsien

AU - Wang, Hsing Hsiang

AU - Yang, Chih Chao

AU - Hsieh, Tung Ying

AU - Lin, Chang Hsien

AU - Chen, Bo Yuan

AU - Shiao, Yu Shao

AU - Huang, Guo Wei

AU - Wong, Oi Ying

AU - Chen, Po-Hung

AU - Yeh, Wen Kuan

PY - 2017/1/31

Y1 - 2017/1/31

N2 - For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D+ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser annealing (CO2-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D+IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D+ IoT chip.

AB - For the first time, we report low-cost heterogeneously integrated sub-40nm epi-like Si monolithic internet of thins (IoT) 3D+-IC with wireless communication, light-electricity power management and vertical ReRAM (VRRAM) modules. High current driving multi-channel 3D+ UTB-MOSFETs (600μA/282μA@VG= ± 1V for 10-channel P/N FETs) was fabricated by low thermal budget super-CMP-planarized visible laser-crystallized epi-like Si channel and CO2 far-infrared laser annealing (CO2-FIR-LA) activation technologies that support a 6.8GHz high frequency VCO circuits, 0.5V low-voltage power management circuit and drives 20nm 4-layer VRRAM (Set/Reset <1.2V/1.8V, 3-bits/cell). This unique TSV-free monolithic 3D+IC process provides the superiority in 3D hetero-integration; we successfully integrate these circuits in a low cost, small footprint, fully functionalized 3D+ IoT chip.

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U2 - 10.1109/IEDM.2016.7838030

DO - 10.1109/IEDM.2016.7838030

M3 - Conference contribution

AN - SCOPUS:85014428108

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 2.3.1-2.3.4

BT - 2016 IEEE International Electron Devices Meeting, IEDM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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ER -

Hsueh FK, Shen CH, Shieh JM, Li KS, Chen HC, Huang WH et al. First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 2.3.1-2.3.4. 7838030. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838030

First fully functionalized monolithic 3D+ IoT chip with 0.5 v light-electricity power management, 6.8 GHz wireless-communication VCO, and 4-layer vertical ReRAM

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