First demonstration of heterogenous complementary FETs utilizing Low-Temperature (200 °c) Hetero-Layers Bonding Technique (LT-HBT)

T. Z. Hong, W. H. Chang, A. Agarwal, Y. T. Huang, C. Y. Yang, T. Y. Chu, H. Y. Chao, Y. Chuang, S. T. Chung, J. H. Lin, S. M. Luo, C. J. Tsai, M. J. Li, X. R. Yu, N. C. Lin, T. C. Cho, P. J. Sung, C. J. Su, G. L. Luo, F. K. HsuehK. L. Lin, H. Ishii, T. Irisawa, T. Maeda, C. T. Wu, W. C.Y. Ma, D. D. Lu, K. H. Kao, Y. J. Lee*, H. J.H. Chen, C. L. Lin, R. W. Chuang, K. P. Huang, S. Samukawa, Yi-Ming Li, Jenn-Hwan Tarng, Tien-Sheng Chao, M. Miura, G. W. Huang, W. F. Wu, J. Y. Li, J. M. Shieh, Y. H. Wang, W. K. Yeh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.5.1-15.5.4
ISBN (Electronic)9781728188881
DOIs
StatePublished - 12 Dec 2020
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 12 Dec 202018 Dec 2020

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/TerritoryUnited States
CityVirtual, San Francisco
Period12/12/2018/12/20

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