First Demonstration of Heterogeneous L-shaped Field Effect Transistor (LFET) for Angstrom Technology Nodes

C. Y. Yang*, P. J. Sung, M. H. Chuang, C. W. Chang, Y. J. Shih, T. Y. Huang, D. D. Lu, T. C. Hong, X. R. Yu, W. H. Lu, S. W. Chang, J. J. Tsai, M. K. Huang, T. C. Cho, Y. J. Lee, K. L. Luo, C. T. Wu, C. J. Su, K. H. Kao, T. S. ChaoW. F. Wu, Y. H. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This study proposes and demonstrates a novel heterogeneous L-shaped FET (LFET) structure consisting of a vertical epitaxially-grown Ge pFET above a lateral Si nFET for the first time. The fabrication challenges of the heterogeneous CFET structure, consisting of a lateral Ge pFET and a lateral Si nFET, are greatly alleviated with the new LFET design. Despite comparable layout footprint for logic and SRAM cells, LFET outperforms CFET with lower parasitic resistances and capacitances for the p-channel device, both leading to reduced gate delay, particularly for the low-to-high logic transition, according to TCAD simulations. LFET exhibits 32.5% lower power for the same operating frequency, or 35% frequency gain for the same operating power. Heterogenous LFET devices with junctionless channels and high- kappa and metal gate stacks are successfully fabricated on SOI substrate, with operational n-channel, p-channel devices, and CMOS inverters.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2021-2024
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

Keywords

  • Heterogeneous integration
  • LFET
  • Vertical FET

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