First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications

S. W. Chang, T. H. Lu, C. Y. Yang, C. J. Yeh, M. K. Huang, C. F. Meng, P. J. Chen, T. H. Chang, Y. S. Chang, J. W. Jhu, T. Z. Hong, C. C. Ke, X. R. Yu, W. H. Lu, M. A. Baig, T. C. Cho, P. J. Sung, C. J. Su, F. K. Hsueh, B. Y. ChenH. H. Hu, C. T. Wu, K. L. Lin, W. C.Y. Ma, D. D. Lu, K. H. Kao, Y. J. Lee, C. L. Lin, K. P. Huang, K. M. Chen, Yi-Ming Li, S. Samukawa, Tien-Sheng Chao, G. W. Huang, W. F. Wu, W. H. Lee, J. Y. Li, J. M. Shieh, Jenn-Hwan Tarng, Y. H. Wang, Wen-Kuan Yeh*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this work, we demonstrate vertically stacked heterogeneous dual-workfunction gate complementary FET (CFET) inverters and 6T-SRAM with n-Type IGZO and p-Type polysilicon channels for the first time. The dual-workfunction gate structure with adjusted gate biasing allows the adjustment of channel potential to match the threshold voltage of transistors for CMOS and SRAM operation. High-frequency IGZO RF devices with p-Type silicon isolation are fabricated simultaneously with the same process. Novel etching process based on fluorine-based gas with an extremely high-etching selectivity between the source/drain metal and the IGZO facilitates the definition of the source/drain region. IGZO surface treated with fluorine-based gas during over-etching step allows a low leakage current shallow passivation layer to optimize direct current characteristics.

Original languageEnglish
Title of host publication2021 IEEE International Electron Devices Meeting, IEDM 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages34.4.1-34.4.4
ISBN (Electronic)9781665425728
DOIs
StatePublished - 2021
Event2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States
Duration: 11 Dec 202116 Dec 2021

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2021-December
ISSN (Print)0163-1918

Conference

Conference2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/TerritoryUnited States
CitySan Francisco
Period11/12/2116/12/21

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