First Demonstration of GAA Monolayer-MoS2Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
- Yun Yan Chung*
- , Bo Jhih Chou
- , Chen Feng Hsu
- , Wei Sheng Yun
- , Ming Yang Li
- , Sheng Kai Su
- , Yu Tsung Liao
- , Meng Chien Lee
- , Guo Wei Huang
- , San Lin Liew
- , Yun Yang Shen
- , Wen Hao Chang
- , Chien Wei Chen
- , Chi Chung Kei
- , Han Wang
- , H. S. Philip Wong
- , T. Y. Lee
- , Chao Hsin Chien
- , Chao Ching Cheng
- , Iuliana P. Radu
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
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