First Demonstration of GAA Monolayer-MoS2Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length

Yun Yan Chung*, Bo Jhih Chou, Chen Feng Hsu, Wei Sheng Yun, Ming Yang Li, Sheng Kai Su, Yu Tsung Liao, Meng Chien Lee, Guo Wei Huang, San Lin Liew, Yun Yang Shen, Wen Hao Chang, Chien Wei Chen, Chi Chung Kei, Han Wang, H. S. Philip Wong, T. Y. Lee, Chao Hsin Chien, Chao Ching Cheng, Iuliana P. Radu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

21 Scopus citations

Abstract

This work demonstrates the first successful integration of monolayer MoS2 nanosheet FET in a gate-all-around configuration. At a gate length of 40nm, the transistor exhibits a remarkable mathrm{I}-{ mathrm{ON}} sim 410 mu mathrm{A}/ { mu} mathrm{m} at mathrm{V}-{ mathrm{DS}}=1 mathrm{V}, achieved with a monolayer channel, '0.7 nm thin. The FET has a large mathrm{I}-{ mathrm{ON}}/ mathrm{I}-{ mathrm{OFF}} gt 1 mathrm{E}8, positive mathrm{V}-{ mathrm{TH}} sim 1.4 mathrm{V} with nearly zero DIBL. Higher drive current can be achieved through stacking of multiple channel layers. We propose here a fully integrated flow and we detail the feasibility of the most critical modules: stack/channel preparation, fin patterning, inner spacer, channel release, contact. The successful demonstration of MoS2 NS with high performance and of the stacked NS modules further clarifies the value proposition in 2D materials for transistor scaling.

Original languageEnglish
Title of host publication2022 International Electron Devices Meeting, IEDM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3451-3454
Number of pages4
ISBN (Electronic)9781665489591
DOIs
StatePublished - 2022
Event2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
Duration: 3 Dec 20227 Dec 2022

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2022-December
ISSN (Print)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
Country/TerritoryUnited States
CitySan Francisco
Period3/12/227/12/22

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