@inproceedings{e4cdb589012846139294bc4216e3f27a,
title = "First Demonstration of Defect Elimination for Cryogenic Ge FinFET CMOS Inverter Showing Steep Subthreshold Slope by Using Ge-on-Insulator Structure",
abstract = "This work presents experimental electrical characteristics and circuit prediction at cryogenic temperatures (down to 10 K) for three different kinds of germanium (Ge)-based FETs with advanced Fin/GAA structures. Among them, the layer transferred Ge-on-Insulator (GeOI) FinFET significantly improves its I-V characteristic during cryogenic measurements, such as a steeper subthreshold swing at 10K and a better Ion. The developed GeOI fabrication method provides an effective way to eliminate the defects originating from misfit dislocations at the Ge/Si substrate during epitaxial growth, which would be treated as the key to device performance enhancement under 10 K. According to the measured IV at 10 K and circuit prediction, GeOI FinFETs with high Ge crystallinity are strong candidates for High-Performance-Computing (HPC) applications.",
author = "Yu, {X. R.} and Hsieh, {C. C.} and Chuang, {M. H.} and Chiu, {M. Y.} and Sun, {T. C.} and Geng, {W. Z.} and Chang, {W. H.} and Shih, {Y. J.} and Lu, {W. H.} and Chang, {W. C.} and Lin, {Y. C.} and Pai, {Y. C.} and Lai, {C. Y.} and Chuang, {M. H.} and Y. Dei and Yang, {C. Y.} and Lu, {H. Y.} and Lin, {N. C.} and Wu, {C. T.} and Kao, {K. H.} and Ma, {W. C.Y.} and Lu, {D. D.} and Lee, {Y. J.} and Luo, {G. L.} and Chiang, {M. H.} and T. Maeda and Wu, {W. F.} and Li, {Y. M.} and Hou, {T. H.}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 International Electron Devices Meeting, IEDM 2023 ; Conference date: 09-12-2023 Through 13-12-2023",
year = "2023",
doi = "10.1109/IEDM45741.2023.10413801",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 International Electron Devices Meeting, IEDM 2023",
address = "美國",
}