First BEOL-compatible IGZO Ferroelectic-Modulated Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and Deep Understanding

Leming Jiao, Zuopu Zhou, Zijie Zheng, Kaizhen Han, Qiwen Kong, Xiaolin Wang, Haiwen Xu, Jishen Zhang, Chen Sun, Yuye Kang, Gengchiau Liang, Xiao Gong*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Tackling the key challenge of the weak erase in oxide semiconductor (OS) FeFETs, for the first time, we experimentally demonstrate a back-end-of-line (BEOL)-compatible IGZO-based ferroelectric-modulated diode (FMD), which effectively doubles the memory window (MW) of the FeFET fabricated under the same process conditions. To provide a clear understanding of the MW enhancement, we develop and establish a comprehensive simulation framework that reveals the interplay between ferroelectric polarization and the current rectified by the metal- semiconductor Schottky diode. Furthermore, through a combination of experimental measurement and theoretical calculation, we validate the performance of our novel FMD device in overcoming the weak erase problem of OS FeFETs. Our study demonstrates the tremendous promise of our FMD for future data storage and in-memory computing applications.

Original languageEnglish
Title of host publication2023 International Electron Devices Meeting, IEDM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327670
DOIs
StatePublished - 2023
Event2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
Duration: 9 Dec 202313 Dec 2023

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
Country/TerritoryUnited States
CitySan Francisco
Period9/12/2313/12/23

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