First BEOL-compatible, 10 ns-fast, and Durable 55 nm Top-pSOT-MRAM with High TMR (>130%)

Kai Shin Li*, Jia Min Shieh, Yi Ju Chen, Cho Lun Hsu, Chang Hong Shen, Tuo Hung Hou, Chia Ping Lin, Chih Huang Lai, Denny D. Tang, Jack Yuan-Chen Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We demonstrated a novel Top-pSOT-MRAM structure by directly fabricating the SOT channel on top of a standard STT-MTJ device. This integration breakthrough significantly simplifies the implementation of SOT technology, as it leverages the standard STT-MRAM process flow. The key element of our proposed Top-pSOT-MRAM is the top electrode comprising a Ru etch-stop layer and a W/Ta composite SOT material, which serves as a bridge connecting the free layer of the MTJ and the Top SOT channel. This Top-pSOT-MRAM device exhibits a high TMR exceeding 130% and excellent thermal stability during the BEOL process up to 400oC. When assisted by STT, the field-free SOT switching achieves impressive speed, as fast as 10 ns, and demonstrates robust endurance exceeding 1010 cycles. Top-pSOT-MRAM at a scaled size of 55 nm maintains a high thermal stability factor (?) of 62, guaranteeing a retention time of 10 years with a low error rate of 1 ppm.

Original languageEnglish
Title of host publication2023 International Electron Devices Meeting, IEDM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350327670
DOIs
StatePublished - 2023
Event2023 International Electron Devices Meeting, IEDM 2023 - San Francisco, United States
Duration: 9 Dec 202313 Dec 2023

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2023 International Electron Devices Meeting, IEDM 2023
Country/TerritoryUnited States
CitySan Francisco
Period9/12/2313/12/23

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