Fine-Feature Cu/In Interconnect Bonding Using Single Sided Heating and Chip-to-Wafer Bonding Technology

Shih Wei Lee, Ching Yun Chang, Geng Ming Chang, Kuan-Neng Chen*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Scopus citations

    Abstract

    A submicron-thick Cu/In bonding by using single sided heating approach has been successfully demonstrated on chip-to-wafer-level without antioxidant metal coating. The single sided heating approach can successfully prevent oxidation of Cu metal on the wafer during bonding. As compared with double sided heating method, a lower specific contact resistance can be obtained in single sided heating method. In addition, post-bonding annealing can further improve the bonding quality. Excellent electrical performances of reliability tests show a great potential for future highly dense interconnect.

    Original languageEnglish
    Article number7797449
    Pages (from-to)128-131
    Number of pages4
    JournalIEEE Journal of the Electron Devices Society
    Volume5
    Issue number2
    DOIs
    StatePublished - 1 Mar 2017

    Keywords

    • Three-dimensional integration
    • chip to wafer bonding
    • single sided heating approach

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