Film-Profile Engineered InGaZnO Thin-Film Transistors with Self-Aligned Bottom Gates

Bo Shiuan Shie, Horng-Chih Lin, Tiao Yuan Huang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We propose and demonstrate a method which combines film profile engineering (FPE) and a procedure of forming self-aligned bottom gates (SABGs) to fabricate InGaZnO thin-film transistors (TFTs). In the scheme, an ingenious etching procedure was implemented to form the final bottom gate self-aligned to the upper hardmask structure. The fabricated SABG devices show greatly reduced OFF-state leakage as compared with nonself-aligned ones, attributing to the reduction of gate-to-source/drain overlap areas which lowers both parasitic capacitance and gate leakage current. These merits benefit the operation of circuits consisted of TFTs implemented with FPE.

Original languageEnglish
Article number7119561
Pages (from-to)787-789
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2015


  • Film profile engineering
  • InGaZnO
  • metal oxide
  • self-aligned
  • thin-film transistor


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