@inproceedings{a7a58f3fc32b4136a801e0176c2d4b61,
title = "Field Plate and Package Optimization for GaN Devices and Systems",
abstract = "To improve GaN-based system performance, this work demonstrates the 650V GaN field plate (FP) design and the optimized integrated circuit (IC) package. The source FP length is suggested to be longer but less than three times the split high FP (HFP). The connection of the split FP and the 1ST FP to source FP can reduce Coss. Longer 1ST FP and shorter Gap design enhance the Miller ratio and suppress the ringing effect in case of switching. The asynchronous boost converter can be implemented with minimal parasitics and double-sided cooling in a proposed 3D IC package.",
author = "Hung, {Sheng Hsi} and Wang, {Tz Wun} and Cho, {Chien Wei} and Chiu, {Po Jui} and Chen, {Chi Yu} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Li, {Chih Chen}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631457",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}