Ferroelectric Properties of HZO Ferroelectric Capacitors with Various Capping Electrodes and Annealing Conditions

Jing Wei Lin, Yan Kui Liang, Yu Chen, Zhen Hao Li, Tsung Che Chiang, Po Tsun Liu, Edward Yi Chang, Chun Hsiung Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the ferroelectric HfZrO2 (HZO) Metal-Ferroelectric-Metal (MFM) structures with the various metal electrodes including TiN, W, Mo, TaN (i.e. MFM=TiN/HZO/TiN, W/HZO/W, Mo/HZO/Mo, TaN/HZO/TaN) were fabricated. We have characterized the ferroelectric properties and microstructure of these MFM structures at various annealing temperature. The orthorhombic phase of samples with different electrodes and annealing temperature were investigated by grazing incidence x-ray diffraction (GIXRD). Microstructure analysis for the MFM capacitors were also conducted using TEM. The trends in remanent polarization and the coercive field of MFM capacitors with differed electrodes were compared by the polarization-voltage (P-V) measurements.

Original languageEnglish
Title of host publication240th ECS Meeting - Semiconductors, Dielectrics, and Metals for Nanoelectronics 18
PublisherIOP Publishing Ltd.
Pages31-34
Number of pages4
Volume104
Edition3
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2021
Event240th ECS Meeting - Orlando, United States
Duration: 10 Oct 202114 Oct 2021

Publication series

NameECS Transactions
Number3
Volume104
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference240th ECS Meeting
Country/TerritoryUnited States
CityOrlando
Period10/10/2114/10/21

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