Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

Sheng Luo; Yihan He; Baofang Cai; Xiao Gong; Gengchiau Liang

doi:10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

Sheng Luo^*, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang^*

^*Corresponding author for this work

Institute of Pioneer Semiconductor Innovation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103119
State	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

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10.1109/EDTM55494.2023.10103119

Cite this

Luo, S., He, Y., Cai, B., Gong, X., & Liang, G. (2023). Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103119

Luo, Sheng ; He, Yihan ; Cai, Baofang et al. / Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{f902fc2246cb4114b232707ce6d24cd4,

title = "Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing",

abstract = "Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.",

author = "Sheng Luo and Yihan He and Baofang Cai and Xiao Gong and Gengchiau Liang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103119",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

address = "美國",

}

Luo, S, He, Y, Cai, B, Gong, X & Liang, G 2023, Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. / Luo, Sheng; He, Yihan; Cai, Baofang et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

AU - Luo, Sheng

AU - He, Yihan

AU - Cai, Baofang

AU - Gong, Xiao

AU - Liang, Gengchiau

PY - 2023

Y1 - 2023

N2 - Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

AB - Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

UR - http://www.scopus.com/inward/record.url?scp=85158146613&partnerID=8YFLogxK

U2 - 10.1109/EDTM55494.2023.10103119

DO - 10.1109/EDTM55494.2023.10103119

M3 - Conference contribution

AN - SCOPUS:85158146613

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Luo S, He Y, Cai B, Gong X, Liang G. Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103119

Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

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