Ferroelectric Probabilistic Bits based on Thermal Noise induced Randomness for Stochastic Computing

Sheng Luo*, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Utilizing the thermal noise-induced dipole fluctuation in ferroelectric material (FE), we propose the probabilistic-bits (p-bits) based on a single ferroelectric FET (FeFET) and verify its functions in integer factorization (IF), a stochastic computing application. By accounting the thermal noise in multi-domain time-dependent Landau-Ginzburg (TDLG) equations, we investigate the impact of several key FE parameters in stochastic behaviors. We further reveal the domain dynamics' crucial role in FE stochasticity and provide unique insights for the realization of FE-based p-bits.

Original languageEnglish
Title of host publication7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publicationStrengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350332520
DOIs
StatePublished - 2023
Event7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
Duration: 7 Mar 202310 Mar 2023

Publication series

Name7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/TerritoryKorea, Republic of
CitySeoul
Period7/03/2310/03/23

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