Ferroelectric HfO2 capacitors for varactor application in GHz

Y. W. Lin; K. Mizutani; T. Hoshii; H. Wakabayashi; K. Tsutsui; Y. F. Tsao; T. J. Huang; H. T. Hsu; K. Kakushima

doi:10.1149/09803.0071ecst

Ferroelectric HfO₂ capacitors for varactor application in GHz

Y. W. Lin, K. Mizutani, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y. F. Tsao, T. J. Huang, H. T. Hsu, K. Kakushima

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Capacitance measurements of a ferroelectric Y-doped HfO₂ film at 1 GHz are performed. By applying a bias voltage within the non-switching region of the ferroelectric film, the change in the capacitance has been confirmed. The results suggest the feasibility of ferroelectric HfO₂ films for varactor application in high frequency region.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences
Editors	D. Misra, S. De Gendt, K. Kita, K. Kakushima, P. Mascher, U. Cvelbar, F. Roozeboom, G. W. Hunter, L. J. Li, C. O'Dwyer
Publisher	IOP Publishing Ltd.
Pages	71-76
Number of pages	6
Edition	3
ISBN (Electronic)	9781607688983
DOIs	https://doi.org/10.1149/09803.0071ecst
State	Published - 2020
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 4 Oct 2020 → 9 Oct 2020

Publication series

Name	ECS Transactions
Number	3
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	4/10/20 → 9/10/20

Access to Document

10.1149/09803.0071ecst

Cite this

Lin, Y. W., Mizutani, K., Hoshii, T., Wakabayashi, H., Tsutsui, K., Tsao, Y. F., Huang, T. J., Hsu, H. T., & Kakushima, K. (2020). Ferroelectric HfO₂ capacitors for varactor application in GHz. In D. Misra, S. De Gendt, K. Kita, K. Kakushima, P. Mascher, U. Cvelbar, F. Roozeboom, G. W. Hunter, L. J. Li, & C. O'Dwyer (Eds.), PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (3 ed., pp. 71-76). (ECS Transactions; Vol. 98, No. 3). IOP Publishing Ltd.. https://doi.org/10.1149/09803.0071ecst

Lin, Y. W. ; Mizutani, K. ; Hoshii, T. et al. / Ferroelectric HfO₂ capacitors for varactor application in GHz. PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. editor / D. Misra ; S. De Gendt ; K. Kita ; K. Kakushima ; P. Mascher ; U. Cvelbar ; F. Roozeboom ; G. W. Hunter ; L. J. Li ; C. O'Dwyer. 3. ed. IOP Publishing Ltd., 2020. pp. 71-76 (ECS Transactions; 3).

@inproceedings{cb01c4fc19484e8190a9fe59801f2d79,

title = "Ferroelectric HfO2 capacitors for varactor application in GHz",

abstract = "Capacitance measurements of a ferroelectric Y-doped HfO2 film at 1 GHz are performed. By applying a bias voltage within the non-switching region of the ferroelectric film, the change in the capacitance has been confirmed. The results suggest the feasibility of ferroelectric HfO2 films for varactor application in high frequency region.",

author = "Lin, {Y. W.} and K. Mizutani and T. Hoshii and H. Wakabayashi and K. Tsutsui and Tsao, {Y. F.} and Huang, {T. J.} and Hsu, {H. T.} and K. Kakushima",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09803.0071ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

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pages = "71--76",

editor = "D. Misra and {De Gendt}, S. and K. Kita and K. Kakushima and P. Mascher and U. Cvelbar and F. Roozeboom and Hunter, {G. W.} and Li, {L. J.} and C. O'Dwyer",

booktitle = "PRiME 2020",

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edition = "3",

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Lin, YW, Mizutani, K, Hoshii, T, Wakabayashi, H, Tsutsui, K, Tsao, YF, Huang, TJ, Hsu, HT & Kakushima, K 2020, Ferroelectric HfO₂ capacitors for varactor application in GHz. in D Misra, S De Gendt, K Kita, K Kakushima, P Mascher, U Cvelbar, F Roozeboom, GW Hunter, LJ Li & C O'Dwyer (eds), PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. 3 edn, ECS Transactions, no. 3, vol. 98, IOP Publishing Ltd., pp. 71-76, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 4/10/20. https://doi.org/10.1149/09803.0071ecst

Ferroelectric HfO₂ capacitors for varactor application in GHz. / Lin, Y. W.; Mizutani, K.; Hoshii, T. et al.
PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. ed. / D. Misra; S. De Gendt; K. Kita; K. Kakushima; P. Mascher; U. Cvelbar; F. Roozeboom; G. W. Hunter; L. J. Li; C. O'Dwyer. 3. ed. IOP Publishing Ltd., 2020. p. 71-76 (ECS Transactions; Vol. 98, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Tsao, Y. F.

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N1 - Publisher Copyright: © The Electrochemical Society

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N2 - Capacitance measurements of a ferroelectric Y-doped HfO2 film at 1 GHz are performed. By applying a bias voltage within the non-switching region of the ferroelectric film, the change in the capacitance has been confirmed. The results suggest the feasibility of ferroelectric HfO2 films for varactor application in high frequency region.

AB - Capacitance measurements of a ferroelectric Y-doped HfO2 film at 1 GHz are performed. By applying a bias voltage within the non-switching region of the ferroelectric film, the change in the capacitance has been confirmed. The results suggest the feasibility of ferroelectric HfO2 films for varactor application in high frequency region.

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Lin YW, Mizutani K, Hoshii T, Wakabayashi H, Tsutsui K, Tsao YF et al. Ferroelectric HfO₂ capacitors for varactor application in GHz. In Misra D, De Gendt S, Kita K, Kakushima K, Mascher P, Cvelbar U, Roozeboom F, Hunter GW, Li LJ, O'Dwyer C, editors, PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. 3 ed. IOP Publishing Ltd. 2020. p. 71-76. (ECS Transactions; 3). doi: 10.1149/09803.0071ecst