Ferroelectric Enhancement in a TiN/Hf1-xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode

Santosh P. Chiniwar; Ya Chen Hsieh; Ching Hsiang Shih; Chih Yu Teng; Jheng Lin Yang; Chenming Hu; Bi Hsuan Lin; Mau Tsu Tang; Yuan Chieh Tseng

doi:10.1021/acsaelm.3c01502

Ferroelectric Enhancement in a TiN/Hf_1-xZr_xO₂/W Device with Controlled Oxidation of the Bottom Electrode

Santosh P. Chiniwar, Ya Chen Hsieh, Ching Hsiang Shih, Chih Yu Teng, Jheng Lin Yang, Chenming Hu, Bi Hsuan Lin, Mau Tsu Tang, Yuan Chieh Tseng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Hf_1-xZ_xO₂ (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for stacking. In this study, we developed a 7 nm film of HZO with a FE polarization (2P_r) value of ∼43 μC/cm² and cycling endurance of 10⁸ by determining the appropriate oxidation state for a W bottom electrode deposited via atomic layer deposition with a relatively low annealing temperature of 400 °C. To visualize FE uniformity, we used X-ray absorption spectroscopy phase mapping to construct a two-dimensional map of the orthorhombic (O), tetragonal (T), and monoclinic (M) phases of the HZO film. Subsequent orientation- and chemical-state-resolved X-ray analysis revealed that the enhanced FE polarization performance can be attributed to the combined effects of interface strain and oxygen vacancies. Piezoelectric force microscopy verified the switching uniformity of the devices and revealed the electrical characteristics for use in device optimization.

Original language	English
Pages (from-to)	1078-1086
Number of pages	9
Journal	ACS Applied Electronic Materials
Volume	6
Issue number	2
DOIs	https://doi.org/10.1021/acsaelm.3c01502
State	Published - 27 Feb 2024

Keywords

PFM
XAS mapping
ferroelectric material
interfacial layer
wake-up

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title = "Ferroelectric Enhancement in a TiN/Hf1-xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode",

abstract = "Hf1-xZxO2 (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for stacking. In this study, we developed a 7 nm film of HZO with a FE polarization (2Pr) value of ∼43 μC/cm2 and cycling endurance of 108 by determining the appropriate oxidation state for a W bottom electrode deposited via atomic layer deposition with a relatively low annealing temperature of 400 °C. To visualize FE uniformity, we used X-ray absorption spectroscopy phase mapping to construct a two-dimensional map of the orthorhombic (O), tetragonal (T), and monoclinic (M) phases of the HZO film. Subsequent orientation- and chemical-state-resolved X-ray analysis revealed that the enhanced FE polarization performance can be attributed to the combined effects of interface strain and oxygen vacancies. Piezoelectric force microscopy verified the switching uniformity of the devices and revealed the electrical characteristics for use in device optimization.",

keywords = "PFM, XAS mapping, ferroelectric material, interfacial layer, wake-up",

author = "Chiniwar, {Santosh P.} and Hsieh, {Ya Chen} and Shih, {Ching Hsiang} and Teng, {Chih Yu} and Yang, {Jheng Lin} and Chenming Hu and Lin, {Bi Hsuan} and Tang, {Mau Tsu} and Tseng, {Yuan Chieh}",

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year = "2024",

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doi = "10.1021/acsaelm.3c01502",

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AU - Chiniwar, Santosh P.

AU - Hsieh, Ya Chen

AU - Shih, Ching Hsiang

AU - Teng, Chih Yu

AU - Yang, Jheng Lin

AU - Hu, Chenming

AU - Lin, Bi Hsuan

AU - Tang, Mau Tsu

AU - Tseng, Yuan Chieh

PY - 2024/2/27

Y1 - 2024/2/27

N2 - Hf1-xZxO2 (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for stacking. In this study, we developed a 7 nm film of HZO with a FE polarization (2Pr) value of ∼43 μC/cm2 and cycling endurance of 108 by determining the appropriate oxidation state for a W bottom electrode deposited via atomic layer deposition with a relatively low annealing temperature of 400 °C. To visualize FE uniformity, we used X-ray absorption spectroscopy phase mapping to construct a two-dimensional map of the orthorhombic (O), tetragonal (T), and monoclinic (M) phases of the HZO film. Subsequent orientation- and chemical-state-resolved X-ray analysis revealed that the enhanced FE polarization performance can be attributed to the combined effects of interface strain and oxygen vacancies. Piezoelectric force microscopy verified the switching uniformity of the devices and revealed the electrical characteristics for use in device optimization.

AB - Hf1-xZxO2 (HZO) is a promising ferroelectric (FE) material with CMOS compatibility, while the TiN/HZO/W metal-ferroelectric-metal structure provides balanced thermal expansion for stacking. In this study, we developed a 7 nm film of HZO with a FE polarization (2Pr) value of ∼43 μC/cm2 and cycling endurance of 108 by determining the appropriate oxidation state for a W bottom electrode deposited via atomic layer deposition with a relatively low annealing temperature of 400 °C. To visualize FE uniformity, we used X-ray absorption spectroscopy phase mapping to construct a two-dimensional map of the orthorhombic (O), tetragonal (T), and monoclinic (M) phases of the HZO film. Subsequent orientation- and chemical-state-resolved X-ray analysis revealed that the enhanced FE polarization performance can be attributed to the combined effects of interface strain and oxygen vacancies. Piezoelectric force microscopy verified the switching uniformity of the devices and revealed the electrical characteristics for use in device optimization.

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Ferroelectric Enhancement in a TiN/Hf_1-xZr_xO₂/W Device with Controlled Oxidation of the Bottom Electrode

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